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postgraduate thesis: Growth of AlInN and zinc blende GaN by molecular beam epitaxy

TitleGrowth of AlInN and zinc blende GaN by molecular beam epitaxy
Authors
Advisors
Advisor(s):Xie, MH
Issue Date2007
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Shi, M. [施敏]. (2007). Growth of AlInN and zinc blende GaN by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3955887
DegreeMaster of Philosophy
SubjectMolecular beam epitaxy.
Gallium nitride
Indium alloys.
Aluminum alloys.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorXie, MH-
dc.contributor.authorShi, Min-
dc.contributor.author施敏-
dc.date.issued2007-
dc.identifier.citationShi, M. [施敏]. (2007). Growth of AlInN and zinc blende GaN by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3955887-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B39558873-
dc.subject.lcshMolecular beam epitaxy.-
dc.subject.lcshGallium nitride-
dc.subject.lcshIndium alloys.-
dc.subject.lcshAluminum alloys.-
dc.titleGrowth of AlInN and zinc blende GaN by molecular beam epitaxy-
dc.typePG_Thesis-
dc.identifier.hkulb3955887-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.description.natureabstract-
dc.identifier.doi10.5353/th_b3955887-
dc.date.hkucongregation2008-

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