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postgraduate thesis: Structure determination by low energy electron diffraction of GaN films on 6H-SiC(0001) substrate by molecular beam epitaxy

TitleStructure determination by low energy electron diffraction of GaN films on 6H-SiC(0001) substrate by molecular beam epitaxy
Authors
Ma, King-man, Simon.馬勁民.
Advisors
Advisor(s):Wu, HS
Issue Date2005
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Ma, K. S. [馬勁民]. (2005). Structure determination by low energy electron diffraction of GaN films on 6H-SiC(0001) substrate by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3653752
DegreeDoctor of Philosophy
SubjectGallium nitride
Low energy electron diffraction.
Semiconductor wafers.
Molecular beam epitaxy.
Dept/ProgramPhysics
Persistent Identifierhttp://hdl.handle.net/10722/52386
HKU Library Item IDb3653752

 

DC FieldValueLanguage
dc.contributor.advisorWu, HS-
dc.contributor.authorMa, King-man, Simon.-
dc.contributor.author馬勁民.-
dc.date.issued2005-
dc.identifier.citationMa, K. S. [馬勁民]. (2005). Structure determination by low energy electron diffraction of GaN films on 6H-SiC(0001) substrate by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3653752-
dc.identifier.urihttp://hdl.handle.net/10722/52386-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.source.urihttp://hub.hku.hk/bib/B36537524-
dc.subject.lcshGallium nitride-
dc.subject.lcshLow energy electron diffraction.-
dc.subject.lcshSemiconductor wafers.-
dc.subject.lcshMolecular beam epitaxy.-
dc.titleStructure determination by low energy electron diffraction of GaN films on 6H-SiC(0001) substrate by molecular beam epitaxy-
dc.typePG_Thesis-
dc.identifier.hkulb3653752-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.description.natureabstract-
dc.identifier.doi10.5353/th_b3653752-
dc.date.hkucongregation2006-
dc.identifier.mmsid991017843469703414-

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