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postgraduate thesis: Deep level defects study of arsenic implanted ZnO single crystal
| Title | Deep level defects study of arsenic implanted ZnO single crystal |
|---|---|
| Authors | |
| Advisors | Advisor(s):Ling, FCC |
| Issue Date | 2008 |
| Publisher | The University of Hong Kong (Pokfulam, Hong Kong) |
| Citation | Zhu, C. [朱從佣]. (2008). Deep level defects study of arsenic implanted ZnO single crystal. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4098775 |
| Degree | Master of Philosophy |
| Subject | Zinc oxide. Arsenic. Doped semiconductors. Semiconductors - Defects. Deep level transient spectroscopy. |
| Dept/Program | Physics |
| Persistent Identifier | http://hdl.handle.net/10722/52363 |
| HKU Library Item ID | b4098775 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Ling, FCC | - |
| dc.contributor.author | Zhu, Congyong. | - |
| dc.contributor.author | 朱從佣. | - |
| dc.date.issued | 2008 | - |
| dc.identifier.citation | Zhu, C. [朱從佣]. (2008). Deep level defects study of arsenic implanted ZnO single crystal. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4098775 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/52363 | - |
| dc.language | eng | - |
| dc.publisher | The University of Hong Kong (Pokfulam, Hong Kong) | - |
| dc.relation.ispartof | HKU Theses Online (HKUTO) | - |
| dc.rights | The author retains all proprietary rights, (such as patent rights) and the right to use in future works. | - |
| dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
| dc.source.uri | http://hub.hku.hk/bib/B40987759 | - |
| dc.subject.lcsh | Zinc oxide. | - |
| dc.subject.lcsh | Arsenic. | - |
| dc.subject.lcsh | Doped semiconductors. | - |
| dc.subject.lcsh | Semiconductors - Defects. | - |
| dc.subject.lcsh | Deep level transient spectroscopy. | - |
| dc.title | Deep level defects study of arsenic implanted ZnO single crystal | - |
| dc.type | PG_Thesis | - |
| dc.identifier.hkul | b4098775 | - |
| dc.description.thesisname | Master of Philosophy | - |
| dc.description.thesislevel | Master | - |
| dc.description.thesisdiscipline | Physics | - |
| dc.description.nature | published_or_final_version | - |
| dc.identifier.doi | 10.5353/th_b4098775 | - |
| dc.date.hkucongregation | 2008 | - |
| dc.identifier.mmsid | 991024192179703414 | - |