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postgraduate thesis: Nucleation and growth of GaN islands by molecular-beam epitaxy

TitleNucleation and growth of GaN islands by molecular-beam epitaxy
Authors
Advisors
Advisor(s):Xie, MH
Issue Date2005
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Pang, K. [彭嘉欣]. (2005). Nucleation and growth of GaN islands by molecular-beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3677654
DegreeMaster of Philosophy
SubjectGallium nitride.
Nucleation.
Molecular beam epitaxy.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorXie, MH-
dc.contributor.authorPang, Ka-yan.-
dc.contributor.author彭嘉欣.-
dc.date.issued2005-
dc.identifier.citationPang, K. [彭嘉欣]. (2005). Nucleation and growth of GaN islands by molecular-beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3677654-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B36776543-
dc.subject.lcshGallium nitride.-
dc.subject.lcshNucleation.-
dc.subject.lcshMolecular beam epitaxy.-
dc.titleNucleation and growth of GaN islands by molecular-beam epitaxy-
dc.typePG_Thesis-
dc.identifier.hkulb3677654-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.description.natureabstract-
dc.identifier.doi10.5353/th_b3677654-
dc.date.hkucongregation2006-

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