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postgraduate thesis: A study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC
| Title | A study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC |
|---|---|
| Authors | |
| Advisors | Advisor(s):Lai, PT |
| Issue Date | 2007 |
| Publisher | The University of Hong Kong (Pokfulam, Hong Kong) |
| Citation | Lin, L. [林立旻]. (2007). A study of gate dielectrics for wide-bandgap semiconductors : GaN & SiC. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3932252 |
| Degree | Doctor of Philosophy |
| Subject | Gallium nitride. Silicon carbide. Gate array circuits Dielectrics. Wide gap semiconductors. |
| Dept/Program | Electrical and Electronic Engineering |
| Persistent Identifier | http://hdl.handle.net/10722/51518 |
| HKU Library Item ID | b3932252 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Lai, PT | - |
| dc.contributor.author | Lin, Limin | - |
| dc.contributor.author | 林立旻 | - |
| dc.date.issued | 2007 | - |
| dc.identifier.citation | Lin, L. [林立旻]. (2007). A study of gate dielectrics for wide-bandgap semiconductors : GaN & SiC. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3932252 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/51518 | - |
| dc.language | eng | - |
| dc.publisher | The University of Hong Kong (Pokfulam, Hong Kong) | - |
| dc.relation.ispartof | HKU Theses Online (HKUTO) | - |
| dc.rights | The author retains all proprietary rights, (such as patent rights) and the right to use in future works. | - |
| dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
| dc.source.uri | http://hub.hku.hk/bib/B3932252X | - |
| dc.subject.lcsh | Gallium nitride. | - |
| dc.subject.lcsh | Silicon carbide. | - |
| dc.subject.lcsh | Gate array circuits | - |
| dc.subject.lcsh | Dielectrics. | - |
| dc.subject.lcsh | Wide gap semiconductors. | - |
| dc.title | A study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC | - |
| dc.type | PG_Thesis | - |
| dc.identifier.hkul | b3932252 | - |
| dc.description.thesisname | Doctor of Philosophy | - |
| dc.description.thesislevel | Doctoral | - |
| dc.description.thesisdiscipline | Electrical and Electronic Engineering | - |
| dc.description.nature | published_or_final_version | - |
| dc.description.nature | abstract | - |
| dc.identifier.doi | 10.5353/th_b3932252 | - |
| dc.date.hkucongregation | 2007 | - |
| dc.identifier.mmsid | 991022386349703414 | - |