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postgraduate thesis: A study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC

TitleA study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC
Authors
Advisors
Advisor(s):Lai, PT
Issue Date2007
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Lin, L. [林立旻]. (2007). A study of gate dielectrics for wide-bandgap semiconductors : GaN & SiC. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3932252
DegreeDoctor of Philosophy
SubjectGallium nitride.
Silicon carbide.
Gate array circuits
Dielectrics.
Wide gap semiconductors.
Dept/ProgramElectrical and Electronic Engineering

 

DC FieldValueLanguage
dc.contributor.advisorLai, PT-
dc.contributor.authorLin, Limin-
dc.contributor.author林立旻-
dc.date.issued2007-
dc.identifier.citationLin, L. [林立旻]. (2007). A study of gate dielectrics for wide-bandgap semiconductors : GaN & SiC. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3932252-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B3932252X-
dc.subject.lcshGallium nitride.-
dc.subject.lcshSilicon carbide.-
dc.subject.lcshGate array circuits-
dc.subject.lcshDielectrics.-
dc.subject.lcshWide gap semiconductors.-
dc.titleA study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC-
dc.typePG_Thesis-
dc.identifier.hkulb3932252-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplineElectrical and Electronic Engineering-
dc.description.naturepublished_or_final_version-
dc.description.natureabstract-
dc.identifier.doi10.5353/th_b3932252-
dc.date.hkucongregation2007-

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