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Article: Improving the efficiency of organic light emitting devices by using co-host electron transport layer

TitleImproving the efficiency of organic light emitting devices by using co-host electron transport layer
Authors
Keywords1,10-phenanthroline
Co-host
Electron transport
Mobility
Tris(8-hydroxyquinoline) aluminum
Issue Date2006
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2006, v. 509 n. 1-2, p. 193-196 How to Cite?
AbstractBy engineering a new cohosting system of tris(8-hydroxyquinoline) and 4,7-diphenyl-1,10-phenanthroline in the electron transport layer, the current efficiency of the organic light emitting diode is improved by 34% to 4.3 cd/A as compared to the device with a single host of Alq 3 as the electron transport layer. The maximum luminance is over 16,000 cd/m 2 at the bias of 22 V and the current of 475 mA/cm 2, which is ∼ 73% higher than the single host Alq 3 device without optimizing the layer thickness. The reasons for the improvement will be investigated. The results strongly indicate that the knowledge of bulk conductivity engineering of organic n-type transporters shows practical significance in OLED applications. © 2005 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/48588
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorHui, KNen_HK
dc.contributor.authorFong, HHen_HK
dc.contributor.authorLiang, YJen_HK
dc.contributor.authorChui, PCen_HK
dc.date.accessioned2008-05-22T04:18:08Z-
dc.date.available2008-05-22T04:18:08Z-
dc.date.issued2006en_HK
dc.identifier.citationThin Solid Films, 2006, v. 509 n. 1-2, p. 193-196en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/48588-
dc.description.abstractBy engineering a new cohosting system of tris(8-hydroxyquinoline) and 4,7-diphenyl-1,10-phenanthroline in the electron transport layer, the current efficiency of the organic light emitting diode is improved by 34% to 4.3 cd/A as compared to the device with a single host of Alq 3 as the electron transport layer. The maximum luminance is over 16,000 cd/m 2 at the bias of 22 V and the current of 475 mA/cm 2, which is ∼ 73% higher than the single host Alq 3 device without optimizing the layer thickness. The reasons for the improvement will be investigated. The results strongly indicate that the knowledge of bulk conductivity engineering of organic n-type transporters shows practical significance in OLED applications. © 2005 Elsevier B.V. All rights reserved.en_HK
dc.format.extent92558 bytes-
dc.format.extent24480 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subject1,10-phenanthrolineen_HK
dc.subjectCo-hosten_HK
dc.subjectElectron transporten_HK
dc.subjectMobilityen_HK
dc.subjectTris(8-hydroxyquinoline) aluminumen_HK
dc.titleImproving the efficiency of organic light emitting devices by using co-host electron transport layeren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0040-6090&volume=509&issue=1-2&spage=193&epage=196&date=2006&atitle=Improving+the+efficiency+of+organic+light+emitting+devices+by+using+co-host+electron+transport+layeren_HK
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.emailChui, PC:pcchui@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.identifier.authorityChui, PC=rp00114en_HK
dc.description.naturepostprinten_HK
dc.identifier.doi10.1016/j.tsf.2005.09.135en_HK
dc.identifier.scopuseid_2-s2.0-33646159730en_HK
dc.identifier.hkuros122508-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33646159730&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume509en_HK
dc.identifier.issue1-2en_HK
dc.identifier.spage193en_HK
dc.identifier.epage196en_HK
dc.identifier.isiWOS:000237754900037-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridHui, KN=12139840100en_HK
dc.identifier.scopusauthoridFong, HH=18037415200en_HK
dc.identifier.scopusauthoridLiang, YJ=34969235300en_HK
dc.identifier.scopusauthoridChui, PC=13309913400en_HK

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