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Conference Paper: Microstructure of the deep level defect E1/E2 in 6H silicon carbide (Abstract)

TitleMicrostructure of the deep level defect E1/E2 in 6H silicon carbide (Abstract)
Authors
KeywordsPhysics
Issue Date2004
PublisherAmerican Physical Society. The Journal's web site is located at http://www.aps.org/memb/guide/prbook-baps.cfm
Citation
The 2004 March Meeting of the American Physical Society, Montreal, QC., Canada, 22-26 March 2004. In the American Physical Society Bulletin, 2004, v. 49, p. 904-905 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/47044
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLing, FCCen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorGong, Men_HK
dc.date.accessioned2007-10-30T07:05:10Z-
dc.date.available2007-10-30T07:05:10Z-
dc.date.issued2004en_HK
dc.identifier.citationThe 2004 March Meeting of the American Physical Society, Montreal, QC., Canada, 22-26 March 2004. In the American Physical Society Bulletin, 2004, v. 49, p. 904-905en_HK
dc.identifier.issn0003-0503en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47044-
dc.format.extent925177 bytes-
dc.format.extent1036577 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://www.aps.org/memb/guide/prbook-baps.cfmen_HK
dc.relation.ispartofAmerican Physical Society Bulletin-
dc.rightsAmerican Physical Society Bulletin. Copyright © American Physical Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysicsen_HK
dc.titleMicrostructure of the deep level defect E1/E2 in 6H silicon carbide (Abstract)en_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-0503&volume=49&spage=904&epage=905&date=2004&atitle=Microstructure+of+the+deep+level+defect+E1/E2+in+6H+silicon+carbide+(Abstract)en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros85838-

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