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Conference Paper: Acceptors in undoped gallium antimonide

TitleAcceptors in undoped gallium antimonide
Authors
KeywordsPhysics engineering chemistry
Issue Date2003
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Progress in compound semiconductor materials III - electronic and optoelectronic applications, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 1-4 December 2003, v. 799, p. 59-63 How to Cite?
AbstractUndoped GaSb materials were studied by temperature dependent Hall (TDH) measurements and photoluminescence (PL). The TDH data reveals four acceptor levels (having ionization energies of 7meV, 32meV, 89meV and 123meV) in the as-grown undoped GaSb samples. The 32meV and the 89meV levels were attributed to the GaSb defect and the VGa-related defect. The Ga Sb defect was found to be the important acceptor responsible for the p-type nature of the present undoped GaSb samples because of its abundance and its low ionization energy. This defect was thermally stable after the 500°C annealing. Similar to the non-irradiated samples, the 777meV and the 800meV PL signals were also observed in the electron irradiated undoped GaSb samples. The decrease of the two peaks' intensities with respect to the electron irradiation dosage reveals the introduction of a non-radiative defect during the electron irradiation process, which competes with the transition responsible for the 777meV and the 800meV PL peaks.
Persistent Identifierhttp://hdl.handle.net/10722/47040
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorLui, MKen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorCheah, KWen_HK
dc.contributor.authorLi, KFen_HK
dc.date.accessioned2007-10-30T07:05:04Z-
dc.date.available2007-10-30T07:05:04Z-
dc.date.issued2003en_HK
dc.identifier.citationProgress in compound semiconductor materials III - electronic and optoelectronic applications, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 1-4 December 2003, v. 799, p. 59-63en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47040-
dc.description.abstractUndoped GaSb materials were studied by temperature dependent Hall (TDH) measurements and photoluminescence (PL). The TDH data reveals four acceptor levels (having ionization energies of 7meV, 32meV, 89meV and 123meV) in the as-grown undoped GaSb samples. The 32meV and the 89meV levels were attributed to the GaSb defect and the VGa-related defect. The Ga Sb defect was found to be the important acceptor responsible for the p-type nature of the present undoped GaSb samples because of its abundance and its low ionization energy. This defect was thermally stable after the 500°C annealing. Similar to the non-irradiated samples, the 777meV and the 800meV PL signals were also observed in the electron irradiated undoped GaSb samples. The decrease of the two peaks' intensities with respect to the electron irradiation dosage reveals the introduction of a non-radiative defect during the electron irradiation process, which competes with the transition responsible for the 777meV and the 800meV PL peaks.en_HK
dc.format.extent232723 bytes-
dc.format.extent1036577 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineering chemistryen_HK
dc.titleAcceptors in undoped gallium antimonideen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=799&spage=59&epage=63&date=2004&atitle=Acceptors+in+undoped+gallium+antimonideen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.scopuseid_2-s2.0-3042546494en_HK
dc.identifier.hkuros85830-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-3042546494&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume799en_HK
dc.identifier.spage59en_HK
dc.identifier.epage63en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLui, MK=7004991693en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK
dc.identifier.scopusauthoridLi, KF=7404989771en_HK

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