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Conference Paper: Structural and electrical properties of beryllium implanted silicon carbide

TitleStructural and electrical properties of beryllium implanted silicon carbide
Authors
KeywordsPhysics engineering chemistry
Issue Date1999
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Wide-bandgap semiconductors for high-power, high-frequency, and high temparture applications-1999, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 5-8 April 1999, v. 572, p. 117-122 How to Cite?
AbstractStructural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500°C and 1700°C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450°C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.
Persistent Identifierhttp://hdl.handle.net/10722/47036
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorHenkel, Ten_HK
dc.contributor.authorTanaka, Yen_HK
dc.contributor.authorKobayashi, Nen_HK
dc.contributor.authorTangue, Hen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-10-30T07:04:59Z-
dc.date.available2007-10-30T07:04:59Z-
dc.date.issued1999en_HK
dc.identifier.citationWide-bandgap semiconductors for high-power, high-frequency, and high temparture applications-1999, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 5-8 April 1999, v. 572, p. 117-122en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47036-
dc.description.abstractStructural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500°C and 1700°C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450°C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.en_HK
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dc.format.extent13983 bytes-
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dc.format.mimetypeapplication/pdf-
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dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineering chemistryen_HK
dc.titleStructural and electrical properties of beryllium implanted silicon carbideen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=572&spage=117&epage=122&date=1999&atitle=Structural+and+electrical+properties+of+beryllium+implanted+silicon+carbideen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.scopuseid_2-s2.0-0033322576en_HK
dc.identifier.hkuros48424-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033322576&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume572en_HK
dc.identifier.spage117en_HK
dc.identifier.epage122en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHenkel, T=7007164479en_HK
dc.identifier.scopusauthoridTanaka, Y=7405314172en_HK
dc.identifier.scopusauthoridKobayashi, N=7404311470en_HK
dc.identifier.scopusauthoridTangue, H=7006255463en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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