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Conference Paper: Model of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP

TitleModel of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP
Authors
KeywordsPhysics
Optics
Issue Date1998
PublisherIEEE.
Citation
The 10th International Conference on Indium Phosphide and Related Materials Proceedings, Tsukuba, Japan, 11-15 May 1998, p. 92-95 How to Cite?
AbstractInfrared absorption spectroscopy measurements indicate high concentration of hydrogen indium vacancy complex VInH4 in undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP. Annealed undoped and Fe-doped semi-insulating (SI) InP are studied by room temperature Hall effect measurement and photocurrent spectroscopy. The results show that a mid gap donor defect and some shallow intrinsic defects are formed by high temperature annealing. This mid gap defect is shown to be phosphorus antisite related. Defect formation process and compensation mechanism in annealed SI InP are discussed.
Persistent Identifierhttp://hdl.handle.net/10722/47034
ISSN

 

DC FieldValueLanguage
dc.contributor.authorYouwen, Zhaoen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorXiaoliang, Xuen_HK
dc.contributor.authorMin, Gongen_HK
dc.contributor.authorNiefeng, Sunen_HK
dc.contributor.authorTongnian, Sunen_HK
dc.contributor.authorXudong, Chenen_HK
dc.contributor.authorRonggui, Zhangen_HK
dc.contributor.authorSilin, Liuen_HK
dc.date.accessioned2007-10-30T07:04:56Z-
dc.date.available2007-10-30T07:04:56Z-
dc.date.issued1998en_HK
dc.identifier.citationThe 10th International Conference on Indium Phosphide and Related Materials Proceedings, Tsukuba, Japan, 11-15 May 1998, p. 92-95en_HK
dc.identifier.issn1092-8669en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47034-
dc.description.abstractInfrared absorption spectroscopy measurements indicate high concentration of hydrogen indium vacancy complex VInH4 in undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP. Annealed undoped and Fe-doped semi-insulating (SI) InP are studied by room temperature Hall effect measurement and photocurrent spectroscopy. The results show that a mid gap donor defect and some shallow intrinsic defects are formed by high temperature annealing. This mid gap defect is shown to be phosphorus antisite related. Defect formation process and compensation mechanism in annealed SI InP are discussed.en_HK
dc.format.extent405879 bytes-
dc.format.extent13983 bytes-
dc.format.extent5932 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofConference Proceedings - International Conference on Indium Phosphide and Related Materialsen_HK
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysicsen_HK
dc.subjectOpticsen_HK
dc.titleModel of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InPen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1092-8669&volume=&spage=92&epage=95&date=1998&atitle=Model+of+defect+formation+in+annealed+undoped+and+Fe-doped+liquid+encapsulated+Czochralski+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/ICIPRM.1998.712409en_HK
dc.identifier.scopuseid_2-s2.0-0032300134en_HK
dc.identifier.hkuros40828-
dc.identifier.spage92en_HK
dc.identifier.epage95en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYouwen, Zhao=6507816545en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridXiaoliang, Xu=6507009961en_HK
dc.identifier.scopusauthoridMin, Gong=9273057400en_HK
dc.identifier.scopusauthoridNiefeng, Sun=6503909806en_HK
dc.identifier.scopusauthoridTongnian, Sun=6506708988en_HK
dc.identifier.scopusauthoridXudong, Chen=36883045400en_HK
dc.identifier.scopusauthoridRonggui, Zhang=6505629432en_HK
dc.identifier.scopusauthoridSilin, Liu=6603710289en_HK

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