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Conference Paper: The transformations of the EL6 deep level defect in n-GaAs: is EL6 a DX-like center?

TitleThe transformations of the EL6 deep level defect in n-GaAs: is EL6 a DX-like center?
Authors
Reddy, CVFung, SHYBeling, CD
KeywordsPhysics engineering chemistry
Issue Date1998
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
The 1998 Symposium of the Materials Research Society Symposium, San Francisco, CA., 13-17 April 1998. In Conference Proceedings, 1998, v. 510, p. 481-486 How to Cite?
AbstractBased on the charge redistribution effect, as observed by the present authors, and the earlier reported large lattice relaxation and persistent photoconductivity phenomena associated with the EL6 defect seen in doped, undoped, semiinsulating(SI) and low temperature grown GaAs (LT-GaAs), it is suggested that this defect be classified as a DX-center. A tentative unified atomic model is proposed for all the native defects EL2, EL3, EL5, and EL6 observed in GaAs.
DescriptionSymposium Theme: Defect and impurity engineered semiconductors II
Persistent Identifierhttp://hdl.handle.net/10722/47030
ISSN
0272-9172
2019 SCImago Journal Rankings: 0.114

 

DC FieldValueLanguage
dc.contributor.authorReddy, CVen_HK
dc.contributor.authorFung, SHYen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-10-30T07:04:50Z-
dc.date.available2007-10-30T07:04:50Z-
dc.date.issued1998en_HK
dc.identifier.citationThe 1998 Symposium of the Materials Research Society Symposium, San Francisco, CA., 13-17 April 1998. In Conference Proceedings, 1998, v. 510, p. 481-486en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47030-
dc.descriptionSymposium Theme: Defect and impurity engineered semiconductors II-
dc.description.abstractBased on the charge redistribution effect, as observed by the present authors, and the earlier reported large lattice relaxation and persistent photoconductivity phenomena associated with the EL6 defect seen in doped, undoped, semiinsulating(SI) and low temperature grown GaAs (LT-GaAs), it is suggested that this defect be classified as a DX-center. A tentative unified atomic model is proposed for all the native defects EL2, EL3, EL5, and EL6 observed in GaAs.en_HK
dc.format.extent314845 bytes-
dc.format.extent13983 bytes-
dc.format.extent5932 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium Proceedings-
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineering chemistryen_HK
dc.titleThe transformations of the EL6 deep level defect in n-GaAs: is EL6 a DX-like center?en_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=510&spage=481&epage=486&date=1998&atitle=The+transformations+of+the+EL6+deep+level+defect+in+n-GaAs:+is+EL6+a+DX-like+center?en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros38879-
dc.identifier.issnl0272-9172-

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