File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Insulator-metal transition in nanostructured Ni-Al thin films

TitleInsulator-metal transition in nanostructured Ni-Al thin films
Authors
Ng, HPNgan, AHW
KeywordsPhysics engineering chemistry
Issue Date2000
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium - Proceedings, 2000, v. 581, p. 571-576 How to Cite?
AbstractThe electrical resistance of Ni-Al alloy thin films prepared by dc magnetron sputtering process was found to be abnormally high at room temperature. However, when heated at elevated temperatures, the resistance dropped significantly, exhibiting a remarkable negative temperature coefficient of resistance (TCR). The phenomenon was found to be substrate-independent. Cross-sectional transmission electron microscopy revealed that the films were essentially nanocrystalline and porous in nature. Analysis of the current density-electric field characteristics yielded a satisfactory agreement with either the space charge limited or the Poole-Frenkel models for electrical conduction. The negative TCR effect diminishes and the usual metallic resistance is restored in thicker films, probably due to reduction in particle separation and further coalescence of neighbouring crystallites.
Persistent Identifierhttp://hdl.handle.net/10722/46658
ISSN
0272-9172
2019 SCImago Journal Rankings: 0.114

 

DC FieldValueLanguage
dc.contributor.authorNg, HPen_HK
dc.contributor.authorNgan, AHWen_HK
dc.date.accessioned2007-10-30T06:55:17Z-
dc.date.available2007-10-30T06:55:17Z-
dc.date.issued2000en_HK
dc.identifier.citationMaterials Research Society Symposium - Proceedings, 2000, v. 581, p. 571-576en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46658-
dc.description.abstractThe electrical resistance of Ni-Al alloy thin films prepared by dc magnetron sputtering process was found to be abnormally high at room temperature. However, when heated at elevated temperatures, the resistance dropped significantly, exhibiting a remarkable negative temperature coefficient of resistance (TCR). The phenomenon was found to be substrate-independent. Cross-sectional transmission electron microscopy revealed that the films were essentially nanocrystalline and porous in nature. Analysis of the current density-electric field characteristics yielded a satisfactory agreement with either the space charge limited or the Poole-Frenkel models for electrical conduction. The negative TCR effect diminishes and the usual metallic resistance is restored in thicker films, probably due to reduction in particle separation and further coalescence of neighbouring crystallites.en_HK
dc.format.extent1454301 bytes-
dc.format.extent41180 bytes-
dc.format.extent310 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_HK
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineering chemistryen_HK
dc.titleInsulator-metal transition in nanostructured Ni-Al thin filmsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=581&spage=571&epage=576&date=2000&atitle=Insulator-Metal+Transition+in+Nanostructured+Ni-Al+Thin+Filmsen_HK
dc.identifier.emailNgan, AHW:hwngan@hkucc.hku.hken_HK
dc.identifier.authorityNgan, AHW=rp00225en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.scopuseid_2-s2.0-0033704029en_HK
dc.identifier.hkuros58588-
dc.identifier.volume581en_HK
dc.identifier.spage571en_HK
dc.identifier.epage576en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridNg, HP=7401619209en_HK
dc.identifier.scopusauthoridNgan, AHW=7006827202en_HK
dc.identifier.issnl0272-9172-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats