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Conference Paper: Novel InGaP/GaAsSb/GaAs DHBTs

TitleNovel InGaP/GaAsSb/GaAs DHBTs
Authors
Issue Date2003
PublisherIEEE.
Citation
IEEE Conference on Electron Devices and Solid-State Circuits, Hong Kong, China, 16-18 December 2003, p. 339-342 How to Cite?
AbstractA study of the InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. Novel device structure is designed. A fully strained pseudomorphic GaAsSb with 8.0% Sb composition is used as the base layer, while an InGaP layer as the emitter which both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. A current gain of 22.6 has been obtained from the InGaP/GaAsSb/GaAs DHBT. Typical turn-on voltage of the device is 0.973 V which is 0.116V lower than that of traditional InGaP/GaAs HBT. Moreover, the current transport mechanism of the InGaP/GaAsSb/GaAs DHBTs is investigated. These results show that GaAsSb is a promising base material for reducing the turn-on voltage of GaAs HBTs.
Persistent Identifierhttp://hdl.handle.net/10722/46515

 

DC FieldValueLanguage
dc.contributor.authorCheung, CCen_HK
dc.contributor.authorYan, BPen_HK
dc.contributor.authorHsu, CCen_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-10-30T06:51:41Z-
dc.date.available2007-10-30T06:51:41Z-
dc.date.issued2003en_HK
dc.identifier.citationIEEE Conference on Electron Devices and Solid-State Circuits, Hong Kong, China, 16-18 December 2003, p. 339-342en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46515-
dc.description.abstractA study of the InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. Novel device structure is designed. A fully strained pseudomorphic GaAsSb with 8.0% Sb composition is used as the base layer, while an InGaP layer as the emitter which both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. A current gain of 22.6 has been obtained from the InGaP/GaAsSb/GaAs DHBT. Typical turn-on voltage of the device is 0.973 V which is 0.116V lower than that of traditional InGaP/GaAs HBT. Moreover, the current transport mechanism of the InGaP/GaAsSb/GaAs DHBTs is investigated. These results show that GaAsSb is a promising base material for reducing the turn-on voltage of GaAs HBTs.en_HK
dc.format.extent223915 bytes-
dc.format.extent2795 bytes-
dc.format.extent2188 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleNovel InGaP/GaAsSb/GaAs DHBTsen_HK
dc.typeConference_Paperen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/EDSSC.2003.1283545en_HK
dc.identifier.hkuros96221-

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