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Conference Paper: Dynamic response of buried heterostructure and stripe geometry λ/4 DFB semiconductor lasers

TitleDynamic response of buried heterostructure and stripe geometry λ/4 DFB semiconductor lasers
Authors
Ling, YLYu, SFLi, EH
KeywordsElectronics
Issue Date1995
PublisherIEEE.
Citation
IEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 1 July 1995, p. 33-36 How to Cite?
DOI: http://dx.doi.org/10.1109/HKEDM.1995.520640
AbstractA comparison between different lateral confinement structures in DFB laser is analyzed with identical material parameters and structure in transverse and longitudinal directions. Results show that stripe geometry DFB lasers offer better dynamic response than buried heterostructure DFB lasers.
Persistent Identifierhttp://hdl.handle.net/10722/46501

 

DC FieldValueLanguage
dc.contributor.authorLing, YLen_HK
dc.contributor.authorYu, SFen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:51:23Z-
dc.date.available2007-10-30T06:51:23Z-
dc.date.issued1995en_HK
dc.identifier.citationIEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 1 July 1995, p. 33-36en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46501-
dc.description.abstractA comparison between different lateral confinement structures in DFB laser is analyzed with identical material parameters and structure in transverse and longitudinal directions. Results show that stripe geometry DFB lasers offer better dynamic response than buried heterostructure DFB lasers.en_HK
dc.format.extent239506 bytes-
dc.format.extent14323 bytes-
dc.format.extent4647 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rights©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectElectronicsen_HK
dc.titleDynamic response of buried heterostructure and stripe geometry λ/4 DFB semiconductor lasersen_HK
dc.typeConference_Paperen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/HKEDM.1995.520640en_HK

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