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Conference Paper: Fabry Perot semiconductor lasers with periodic diffused quantum wells structure

TitleFabry Perot semiconductor lasers with periodic diffused quantum wells structure
Authors
KeywordsElectronics
Issue Date1995
PublisherIEEE.
Citation
IEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 1 July 1995, p. 30-32 How to Cite?
AbstractFabry Perot semiconductor laser with periodic change in the extent of interdiffusion along the longitudinal direction of the quantum well active region is proposed to improve the discrimination between cavity modes.
Persistent Identifierhttp://hdl.handle.net/10722/46500

 

DC FieldValueLanguage
dc.contributor.authorLo, CWen_HK
dc.contributor.authorYu, SFen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:51:21Z-
dc.date.available2007-10-30T06:51:21Z-
dc.date.issued1995en_HK
dc.identifier.citationIEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 1 July 1995, p. 30-32en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46500-
dc.description.abstractFabry Perot semiconductor laser with periodic change in the extent of interdiffusion along the longitudinal direction of the quantum well active region is proposed to improve the discrimination between cavity modes.en_HK
dc.format.extent172198 bytes-
dc.format.extent14323 bytes-
dc.format.extent4647 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rights©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectElectronicsen_HK
dc.titleFabry Perot semiconductor lasers with periodic diffused quantum wells structureen_HK
dc.typeConference_Paperen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/HKEDM.1995.520639en_HK
dc.identifier.hkuros9357-

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