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Conference Paper: Theoretical discussion on reduced aberration sensitivity of enhanced alternating phase-shifting masks

TitleTheoretical discussion on reduced aberration sensitivity of enhanced alternating phase-shifting masks
Authors
Keywordsoptical lithography
phase-shifting mask
aberrations
alternating phase-shifting mask
enhanced alternating phase-shifting mask
Issue Date2002
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Optical microlithography XV, Santa Clara, USA, 5-8 March 2002, v. 4691, p. 359-368 How to Cite?
AbstractTwo theories are developed to quantify image skew of photomask features caused by aberrations. In one formulation, the extent of image distortion can be described by the image asymmetry (Δxasymmetry) ,which captures both image shift and sidelobe intensity imbalance. This quantity is equivalent to the shift of the image centroid. In situations where one is more concerned with placement error than centroid shift, the change in the location of the intensity extremum (Δxshift) can be expressed as functions of the mask spectrum and the wave aberration. This theory on image shift is applied to the study of enhanced alternating PSMs. Although the optimal mask pattern is aberration-function-specific, mask spectra with gradual variations have lower placement sensitivity in general. These theories are applicable to all mask technologies and patterns.
Persistent Identifierhttp://hdl.handle.net/10722/46315
ISSN

 

DC FieldValueLanguage
dc.contributor.authorWong, AKKen_HK
dc.date.accessioned2007-10-30T06:47:10Z-
dc.date.available2007-10-30T06:47:10Z-
dc.date.issued2002en_HK
dc.identifier.citationOptical microlithography XV, Santa Clara, USA, 5-8 March 2002, v. 4691, p. 359-368en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46315-
dc.description.abstractTwo theories are developed to quantify image skew of photomask features caused by aberrations. In one formulation, the extent of image distortion can be described by the image asymmetry (Δxasymmetry) ,which captures both image shift and sidelobe intensity imbalance. This quantity is equivalent to the shift of the image centroid. In situations where one is more concerned with placement error than centroid shift, the change in the location of the intensity extremum (Δxshift) can be expressed as functions of the mask spectrum and the wave aberration. This theory on image shift is applied to the study of enhanced alternating PSMs. Although the optimal mask pattern is aberration-function-specific, mask spectra with gradual variations have lower placement sensitivity in general. These theories are applicable to all mask technologies and patterns.en_HK
dc.format.extent359143 bytes-
dc.format.extent5278 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCopyright 2002 Society of Photo-Optical Instrumentation Engineers. This paper was published in Optical microlithography XV, Santa Clara, USA, 5-8 March 2002, v. 4691, p. 359-368 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en_HK
dc.subjectoptical lithographyen_HK
dc.subjectphase-shifting masken_HK
dc.subjectaberrationsen_HK
dc.subjectalternating phase-shifting masken_HK
dc.subjectenhanced alternating phase-shifting masken_HK
dc.titleTheoretical discussion on reduced aberration sensitivity of enhanced alternating phase-shifting masksen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=4691&spage=359&epage=368&date=2002&atitle=Theoretical+discussion+on+reduced+aberration+sensitivity+of+enhanced+alternating+phase-shifting+masksen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.474585en_HK
dc.identifier.scopuseid_2-s2.0-0036413420-
dc.identifier.hkuros71736-

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