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Conference Paper: Calculations of the refractive index of AlGaN/GaN quantum well

TitleCalculations of the refractive index of AlGaN/GaN quantum well
Authors
KeywordsAlxGa1-xN/GaN quantum wells
Refractive index
Issue Date2001
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Physics and simulation of optoelectronic devices IX, San Jose, USA, 22-26 January 2001, v. 4283, p. 630-637 How to Cite?
AbstractWe have calculated the refractive index of a AlxGa1-xN/GaN square quantum well (QW). The imaginary part of the dielectric function has been obtained by summing up the contributions of the dominant interband transitions, excitonic contributions, and the continuum contribution, obtained by weighting the well's and the barrier's continuum contributions. In the calculation of the contribution of the conduction-valence band bound-state effect without electron-hole interaction, conduction bands are assumed to be parabolic and valence bands have been calculated using Chuang's model [Phys. Rev. B 54, 2491 (1996)], but with Chan's basis expansion method [J. Phys. C 19, L125 (1986)] instead of finite-difference scheme. Excitonic contribution has been described with an expression derived by the density-matrix approach at the subband edge without the influence of band mixing. The continuum contributions have been described with the modified Adachi's model. The effects of the aluminum mole fraction x and the width of the well on the refractive index are analyzed and discussed.
Persistent Identifierhttp://hdl.handle.net/10722/46278
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorChan, Yen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:46:22Z-
dc.date.available2007-10-30T06:46:22Z-
dc.date.issued2001en_HK
dc.identifier.citationPhysics and simulation of optoelectronic devices IX, San Jose, USA, 22-26 January 2001, v. 4283, p. 630-637en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46278-
dc.description.abstractWe have calculated the refractive index of a AlxGa1-xN/GaN square quantum well (QW). The imaginary part of the dielectric function has been obtained by summing up the contributions of the dominant interband transitions, excitonic contributions, and the continuum contribution, obtained by weighting the well's and the barrier's continuum contributions. In the calculation of the contribution of the conduction-valence band bound-state effect without electron-hole interaction, conduction bands are assumed to be parabolic and valence bands have been calculated using Chuang's model [Phys. Rev. B 54, 2491 (1996)], but with Chan's basis expansion method [J. Phys. C 19, L125 (1986)] instead of finite-difference scheme. Excitonic contribution has been described with an expression derived by the density-matrix approach at the subband edge without the influence of band mixing. The continuum contributions have been described with the modified Adachi's model. The effects of the aluminum mole fraction x and the width of the well on the refractive index are analyzed and discussed.en_HK
dc.format.extent229073 bytes-
dc.format.extent3553 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCopyright 2001 Society of Photo-Optical Instrumentation Engineers. This paper was published in Physics and simulation of optoelectronic devices IX, San Jose, USA, 22-26 January 2001, v. 4283, p. 630-637 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en_HK
dc.subjectAlxGa1-xN/GaN quantum wellsen_HK
dc.subjectRefractive indexen_HK
dc.titleCalculations of the refractive index of AlGaN/GaN quantum wellen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=4283&spage=630&epage=637&date=2001&atitle=Calculations+of+the+refractive+index+of+AlGaN/GaN+quantum+wellen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.432616en_HK
dc.identifier.scopuseid_2-s2.0-0034774047en_HK
dc.identifier.hkuros63821-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034774047&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume4283en_HK
dc.identifier.spage630en_HK
dc.identifier.epage637en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridChan, Y=7403676038en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK

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