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Conference Paper: Asymmetric biasing for subgrid pattern adjustment

TitleAsymmetric biasing for subgrid pattern adjustment
Authors
Wong, AKKLiebmann, LW
Keywordsoptical lithography
optical proximity correction
halftone biasing
asymmetric subgrid biasing
Issue Date2001
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Optical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001. In Proceedings of SPIE, 2001, v. 4346, p. 1548-1553 How to Cite?
DOI: http://dx.doi.org/10.1117/12.435697
AbstractThe location of a printed edge can be controlled to a fineness that is two orders of magnitude smaller than the design grid, if a slight displacement of the pattern can be tolerated. The essence of this asymmetric subgrid biasing technique is the crenelation of two edges of a pattern into different periods. Fractional arithmetic results in a bias increment that much smaller than that can be achieved with halftone biasing. For a design grid of 20 nm (1X) , and an exposure system with A = 248 nm, NA = 0.68, and a = 0.8, the bias increment can be as small as 0.22 nm.
Persistent Identifierhttp://hdl.handle.net/10722/46237
ISSN
0277-786X
2020 SCImago Journal Rankings: 0.192

 

DC FieldValueLanguage
dc.contributor.authorWong, AKKen_HK
dc.contributor.authorLiebmann, LWen_HK
dc.date.accessioned2007-10-30T06:45:26Z-
dc.date.available2007-10-30T06:45:26Z-
dc.date.issued2001en_HK
dc.identifier.citationOptical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001. In Proceedings of SPIE, 2001, v. 4346, p. 1548-1553-
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46237-
dc.description.abstractThe location of a printed edge can be controlled to a fineness that is two orders of magnitude smaller than the design grid, if a slight displacement of the pattern can be tolerated. The essence of this asymmetric subgrid biasing technique is the crenelation of two edges of a pattern into different periods. Fractional arithmetic results in a bias increment that much smaller than that can be achieved with halftone biasing. For a design grid of 20 nm (1X) , and an exposure system with A = 248 nm, NA = 0.68, and a = 0.8, the bias increment can be as small as 0.22 nm.en_HK
dc.format.extent122497 bytes-
dc.format.extent5278 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.relation.ispartofProceedings of SPIE-
dc.rightsCopyright 2001 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.435697-
dc.subjectoptical lithographyen_HK
dc.subjectoptical proximity correctionen_HK
dc.subjecthalftone biasingen_HK
dc.subjectasymmetric subgrid biasingen_HK
dc.titleAsymmetric biasing for subgrid pattern adjustmenten_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=4346&spage=1548&epage=1553&date=2001&atitle=Asymmetric+biasing+for+subgrid+pattern+adjustmenten_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.435697en_HK
dc.identifier.scopuseid_2-s2.0-0035758441-
dc.identifier.hkuros58884-
dc.identifier.issnl0277-786X-

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