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Conference Paper: Asymmetric biasing for subgrid pattern adjustment

TitleAsymmetric biasing for subgrid pattern adjustment
Authors
Keywordsoptical lithography
optical proximity correction
halftone biasing
asymmetric subgrid biasing
Issue Date2001
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Optical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001, v. 4346, p. 1548-1553 How to Cite?
AbstractThe location of a printed edge can be controlled to a fineness that is two orders of magnitude smaller than the design grid, if a slight displacement of the pattern can be tolerated. The essence of this asymmetric subgrid biasing technique is the crenelation of two edges of a pattern into different periods. Fractional arithmetic results in a bias increment that much smaller than that can be achieved with halftone biasing. For a design grid of 20 nm (1X) , and an exposure system with A = 248 nm, NA = 0.68, and a = 0.8, the bias increment can be as small as 0.22 nm.
Persistent Identifierhttp://hdl.handle.net/10722/46237
ISSN

 

DC FieldValueLanguage
dc.contributor.authorWong, AKKen_HK
dc.contributor.authorLiebmann, LWen_HK
dc.date.accessioned2007-10-30T06:45:26Z-
dc.date.available2007-10-30T06:45:26Z-
dc.date.issued2001en_HK
dc.identifier.citationOptical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001, v. 4346, p. 1548-1553en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46237-
dc.description.abstractThe location of a printed edge can be controlled to a fineness that is two orders of magnitude smaller than the design grid, if a slight displacement of the pattern can be tolerated. The essence of this asymmetric subgrid biasing technique is the crenelation of two edges of a pattern into different periods. Fractional arithmetic results in a bias increment that much smaller than that can be achieved with halftone biasing. For a design grid of 20 nm (1X) , and an exposure system with A = 248 nm, NA = 0.68, and a = 0.8, the bias increment can be as small as 0.22 nm.en_HK
dc.format.extent122497 bytes-
dc.format.extent5278 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsCopyright 2001 Society of Photo-Optical Instrumentation Engineers.This paper was published in Optical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001, v. 4346, p. 1548-1553 and is madeavailable as an electronic reprint with permission of SPIE. One print or electronic copy may bemade for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes,or modification of the content of the paper are prohibited.en_HK
dc.subjectoptical lithographyen_HK
dc.subjectoptical proximity correctionen_HK
dc.subjecthalftone biasingen_HK
dc.subjectasymmetric subgrid biasingen_HK
dc.titleAsymmetric biasing for subgrid pattern adjustmenten_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=4346&spage=1548&epage=1553&date=2001&atitle=Asymmetric+biasing+for+subgrid+pattern+adjustmenten_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.435697en_HK
dc.identifier.scopuseid_2-s2.0-0035758441-
dc.identifier.hkuros58884-

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