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Conference Paper: Alternating phase-shifting mask with reduced aberration sensitivity: lithography considerations

TitleAlternating phase-shifting mask with reduced aberration sensitivity: lithography considerations
Authors
Keywordsoptical lithography
phase-shifting mask
aberrations
alternating phase-shifting mask
enhanced alternating phase-shifting mask
Issue Date2001
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Optical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001, v. 4346, p. 420-428 How to Cite?
AbstractAberration sensitivity of alternating phase-shifting masks (PSMs) can be reduced by taking advantage of the trim exposure. Rather than a single phase region bordering each edge of a line, the enhanced alternating PSM technique uses multiple phase regions. The number of phase regions and their widths can be optimized for overall process tolerance including aberration sensitivity and exposure latitude. For exposure with a wavelength of 248 nm and a numerical aperture of 0.68, the optimal number of phase regions is two, with widths between 100 nm and 200 nm. These auxiliary phase regions do not affect the final pattern if a light-field trim mask is used. No extra processing step is necessary. With the enhanced alternating PSM technique, isolated lines of average dimension as small as 36 nm can be delineated using 248 urn lithography with a 3o- linewidth control of 13.4 urn. The mean critical dimension of 36 urn corresponds to k1 = 0.1.
Persistent Identifierhttp://hdl.handle.net/10722/46226
ISSN

 

DC FieldValueLanguage
dc.contributor.authorWong, AKKen_HK
dc.contributor.authorLiebmann, LWen_HK
dc.contributor.authorMolless, AFen_HK
dc.date.accessioned2007-10-30T06:45:11Z-
dc.date.available2007-10-30T06:45:11Z-
dc.date.issued2001en_HK
dc.identifier.citationOptical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001, v. 4346, p. 420-428en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46226-
dc.description.abstractAberration sensitivity of alternating phase-shifting masks (PSMs) can be reduced by taking advantage of the trim exposure. Rather than a single phase region bordering each edge of a line, the enhanced alternating PSM technique uses multiple phase regions. The number of phase regions and their widths can be optimized for overall process tolerance including aberration sensitivity and exposure latitude. For exposure with a wavelength of 248 nm and a numerical aperture of 0.68, the optimal number of phase regions is two, with widths between 100 nm and 200 nm. These auxiliary phase regions do not affect the final pattern if a light-field trim mask is used. No extra processing step is necessary. With the enhanced alternating PSM technique, isolated lines of average dimension as small as 36 nm can be delineated using 248 urn lithography with a 3o- linewidth control of 13.4 urn. The mean critical dimension of 36 urn corresponds to k1 = 0.1.en_HK
dc.format.extent223475 bytes-
dc.format.extent5278 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCopyright 2001 Society of Photo-Optical Instrumentation Engineers.This paper was published in Optical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001, v. 4346, p. 420-428 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may bemade for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes,or modification of the content of the paper are prohibited.en_HK
dc.subjectoptical lithographyen_HK
dc.subjectphase-shifting masken_HK
dc.subjectaberrationsen_HK
dc.subjectalternating phase-shifting masken_HK
dc.subjectenhanced alternating phase-shifting masken_HK
dc.titleAlternating phase-shifting mask with reduced aberration sensitivity: lithography considerationsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=4346&spage=420&epage=428&date=2001&atitle=Alternating+phase-shifting+mask+with+reduced+aberration+sensitivity:+lithography+considerationsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.435742en_HK
dc.identifier.scopuseid_2-s2.0-0035758401-
dc.identifier.hkuros58673-

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