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- Publisher Website: 10.1109/HKEDM.1994.395138
- Scopus: eid_2-s2.0-85063387370
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Conference Paper: Electrical performance and reliability of n-MOSFETs with gate dielectrics fabricated by different techniques
| Title | Electrical performance and reliability of n-MOSFETs with gate dielectrics fabricated by different techniques |
|---|---|
| Authors | |
| Keywords | Electronics |
| Issue Date | 1994 |
| Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=395138 |
| Citation | The 1994 IEEE Hong Kong Electron Devices Meeting, The Hong Kong University of Science and Technology, Hong Kong, 18 July 1994. In Conference Proceedings, 1994, p. 18-21 How to Cite? |
| Abstract | In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N2O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH3 nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress. |
| Persistent Identifier | http://hdl.handle.net/10722/46216 |
| ISBN |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Xu, Z | en_HK |
| dc.contributor.author | Lai, PT | en_HK |
| dc.contributor.author | Ng, WT | en_HK |
| dc.date.accessioned | 2007-10-30T06:45:00Z | - |
| dc.date.available | 2007-10-30T06:45:00Z | - |
| dc.date.issued | 1994 | en_HK |
| dc.identifier.citation | The 1994 IEEE Hong Kong Electron Devices Meeting, The Hong Kong University of Science and Technology, Hong Kong, 18 July 1994. In Conference Proceedings, 1994, p. 18-21 | en_HK |
| dc.identifier.isbn | 0-7803-2086-7 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/46216 | - |
| dc.description.abstract | In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N2O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH3 nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress. | en_HK |
| dc.language | eng | en_HK |
| dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=395138 | en_HK |
| dc.relation.ispartof | Proceedings of the IEEE Hong Kong Electron Devices Meeting | - |
| dc.rights | ©1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
| dc.subject | Electronics | en_HK |
| dc.title | Electrical performance and reliability of n-MOSFETs with gate dielectrics fabricated by different techniques | en_HK |
| dc.type | Conference_Paper | en_HK |
| dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
| dc.description.nature | published_or_final_version | en_HK |
| dc.identifier.doi | 10.1109/HKEDM.1994.395138 | en_HK |
| dc.identifier.scopus | eid_2-s2.0-85063387370 | - |
| dc.identifier.hkuros | 5506 | - |
| dc.identifier.spage | 18 | - |
| dc.identifier.epage | 21 | - |
| dc.customcontrol.immutable | sml 140930 | - |