File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Electrical performance and reliability of n-MOSFETs with gate dielectrics fabricated by different techniques

TitleElectrical performance and reliability of n-MOSFETs with gate dielectrics fabricated by different techniques
Authors
KeywordsElectronics
Issue Date1994
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=395138
Citation
The 1994 IEEE Hong Kong Electron Devices Meeting, The Hong Kong University of Science and Technology, Hong Kong, 18 July 1994. In Conference Proceedings, 1994, p. 18-21 How to Cite?
AbstractIn this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N2O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH3 nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress.
Persistent Identifierhttp://hdl.handle.net/10722/46216
ISBN

 

DC FieldValueLanguage
dc.contributor.authorXu, Zen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorNg, WTen_HK
dc.date.accessioned2007-10-30T06:45:00Z-
dc.date.available2007-10-30T06:45:00Z-
dc.date.issued1994en_HK
dc.identifier.citationThe 1994 IEEE Hong Kong Electron Devices Meeting, The Hong Kong University of Science and Technology, Hong Kong, 18 July 1994. In Conference Proceedings, 1994, p. 18-21en_HK
dc.identifier.isbn0-7803-2086-7-
dc.identifier.urihttp://hdl.handle.net/10722/46216-
dc.description.abstractIn this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N2O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH3 nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress.en_HK
dc.languageengen_HK
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=395138en_HK
dc.relation.ispartofProceedings of the IEEE Hong Kong Electron Devices Meeting-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_HK
dc.rights©1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectElectronicsen_HK
dc.titleElectrical performance and reliability of n-MOSFETs with gate dielectrics fabricated by different techniquesen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/HKEDM.1994.395138en_HK
dc.identifier.hkuros5506-
dc.identifier.spage18-
dc.identifier.epage21-
dc.customcontrol.immutablesml 140930-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats