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Conference Paper: Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors

TitleAvalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors
Authors
Yan, BYang, ES
KeywordsElectronics
Issue Date1999
PublisherIEEE.
Citation
IEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 24 June 2000, p. 122-125 How to Cite?
DOI: http://dx.doi.org/10.1109/HKEDM.2000.904230
AbstractThe hole-initiated impact ionization multiplication factor Mp -1 and the ionization coefficient αp in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors are presented. A large departure is observed at low electric field when comparison is made between the measured data and those obtained from avalanche photodiode measurements. The results show that the conventional impact ionization models, based on local electric field, substantially overestimate the hole impact ionization multiplication factor Mp -1 and the hole ionization coefficient in p-n-p heterojunction bipolar transistors where significant dead space effects occur in the collector space charge region.
Persistent Identifierhttp://hdl.handle.net/10722/46182

 

DC FieldValueLanguage
dc.contributor.authorYan, Ben_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-10-30T06:44:16Z-
dc.date.available2007-10-30T06:44:16Z-
dc.date.issued1999en_HK
dc.identifier.citationIEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 24 June 2000, p. 122-125en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46182-
dc.description.abstractThe hole-initiated impact ionization multiplication factor Mp -1 and the ionization coefficient αp in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors are presented. A large departure is observed at low electric field when comparison is made between the measured data and those obtained from avalanche photodiode measurements. The results show that the conventional impact ionization models, based on local electric field, substantially overestimate the hole impact ionization multiplication factor Mp -1 and the hole ionization coefficient in p-n-p heterojunction bipolar transistors where significant dead space effects occur in the collector space charge region.en_HK
dc.format.extent339645 bytes-
dc.format.extent2795 bytes-
dc.format.extent5169 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rights©2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectElectronicsen_HK
dc.titleAvalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistorsen_HK
dc.typeConference_Paperen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/HKEDM.2000.904230en_HK
dc.identifier.hkuros52075-

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