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Conference Paper: A self-aligned structure AlGaAs/GaAs HBT's using silicon nitride sidewall technique

TitleA self-aligned structure AlGaAs/GaAs HBT's using silicon nitride sidewall technique
Authors
KeywordsElectronics
Issue Date1999
PublisherIEEE.
Citation
IEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 24 June 2000, p. 86-89 How to Cite?
AbstractA self-aligned fabrication process for AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is presented. The advantage of this process is that selfaligned structure and device passivation can be realized simultaneously using silicon nitride sidewall technique. The silicon nitride sidewall functions both as an isolation layer to prevent shorting between the base metal and the emitter mesa and as an etching mask to prevent AlGaAs passivation layer to be removed. A current gain cutoff frequency fT of 30 GHz and a maximum oscillation frequency fmax of 50 GHz have been obtained from the device with 3 μm×15 μm emitter size.
Persistent Identifierhttp://hdl.handle.net/10722/46181

 

DC FieldValueLanguage
dc.contributor.authorYan, Ben_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-10-30T06:44:15Z-
dc.date.available2007-10-30T06:44:15Z-
dc.date.issued1999en_HK
dc.identifier.citationIEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 24 June 2000, p. 86-89en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46181-
dc.description.abstractA self-aligned fabrication process for AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is presented. The advantage of this process is that selfaligned structure and device passivation can be realized simultaneously using silicon nitride sidewall technique. The silicon nitride sidewall functions both as an isolation layer to prevent shorting between the base metal and the emitter mesa and as an etching mask to prevent AlGaAs passivation layer to be removed. A current gain cutoff frequency fT of 30 GHz and a maximum oscillation frequency fmax of 50 GHz have been obtained from the device with 3 μm×15 μm emitter size.en_HK
dc.format.extent316971 bytes-
dc.format.extent2795 bytes-
dc.format.extent5169 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectElectronicsen_HK
dc.titleA self-aligned structure AlGaAs/GaAs HBT's using silicon nitride sidewall techniqueen_HK
dc.typeConference_Paperen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/HKEDM.2000.904222en_HK
dc.identifier.hkuros52072-

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