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Conference Paper: A self-aligned structure AlGaAs/GaAs HBT's using silicon nitride sidewall technique
Title | A self-aligned structure AlGaAs/GaAs HBT's using silicon nitride sidewall technique |
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Authors | |
Keywords | Electronics |
Issue Date | 1999 |
Publisher | IEEE. |
Citation | IEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 24 June 2000, p. 86-89 How to Cite? |
Abstract | A self-aligned fabrication process for AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is presented. The advantage of this process is that selfaligned structure and device passivation can be realized simultaneously using silicon nitride sidewall technique. The silicon nitride sidewall functions both as an isolation layer to prevent shorting between the base metal and the emitter mesa and as an etching mask to prevent AlGaAs passivation layer to be removed. A current gain cutoff frequency fT of 30 GHz and a maximum oscillation frequency fmax of 50 GHz have been obtained from the device with 3 μm×15 μm emitter size. |
Persistent Identifier | http://hdl.handle.net/10722/46181 |
DC Field | Value | Language |
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dc.contributor.author | Yan, B | en_HK |
dc.contributor.author | Yang, ES | en_HK |
dc.date.accessioned | 2007-10-30T06:44:15Z | - |
dc.date.available | 2007-10-30T06:44:15Z | - |
dc.date.issued | 1999 | en_HK |
dc.identifier.citation | IEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 24 June 2000, p. 86-89 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/46181 | - |
dc.description.abstract | A self-aligned fabrication process for AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is presented. The advantage of this process is that selfaligned structure and device passivation can be realized simultaneously using silicon nitride sidewall technique. The silicon nitride sidewall functions both as an isolation layer to prevent shorting between the base metal and the emitter mesa and as an etching mask to prevent AlGaAs passivation layer to be removed. A current gain cutoff frequency fT of 30 GHz and a maximum oscillation frequency fmax of 50 GHz have been obtained from the device with 3 μm×15 μm emitter size. | en_HK |
dc.format.extent | 316971 bytes | - |
dc.format.extent | 2795 bytes | - |
dc.format.extent | 5169 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | IEEE. | en_HK |
dc.rights | ©2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
dc.subject | Electronics | en_HK |
dc.title | A self-aligned structure AlGaAs/GaAs HBT's using silicon nitride sidewall technique | en_HK |
dc.type | Conference_Paper | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1109/HKEDM.2000.904222 | en_HK |
dc.identifier.hkuros | 52072 | - |