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Conference Paper: Anodic-oxide-induced interdiffusion in quantum wells structure
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TitleAnodic-oxide-induced interdiffusion in quantum wells structure
 
AuthorsChan, CY
Li, EH
Shu, Y
Tan, HH
Jagadish, C
 
KeywordsElectronics
 
Issue Date1998
 
PublisherIEEE.
 
CitationIEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 29 August 1998, p. 74-77 [How to Cite?]
DOI: http://dx.doi.org/10.1109/HKEDM.1998.740191
 
AbstractEnhancement of interdiffusion in GaAs/AlGaAs quantum wells (QWs) due to anodic oxides was studied. Photoluminescence and diffused QW modeling were used to understand the effects of intermixing on the QW structure. The activation energy is similar to those obtained from SiO 2 cap annealed quantum well structures.
 
DOIhttp://dx.doi.org/10.1109/HKEDM.1998.740191
 
DC FieldValue
dc.contributor.authorChan, CY
 
dc.contributor.authorLi, EH
 
dc.contributor.authorShu, Y
 
dc.contributor.authorTan, HH
 
dc.contributor.authorJagadish, C
 
dc.date.accessioned2007-10-30T06:43:26Z
 
dc.date.available2007-10-30T06:43:26Z
 
dc.date.issued1998
 
dc.description.abstractEnhancement of interdiffusion in GaAs/AlGaAs quantum wells (QWs) due to anodic oxides was studied. Photoluminescence and diffused QW modeling were used to understand the effects of intermixing on the QW structure. The activation energy is similar to those obtained from SiO 2 cap annealed quantum well structures.
 
dc.description.naturepublished_or_final_version
 
dc.format.extent328421 bytes
 
dc.format.extent1960 bytes
 
dc.format.extent14323 bytes
 
dc.format.mimetypeapplication/pdf
 
dc.format.mimetypetext/plain
 
dc.format.mimetypetext/plain
 
dc.identifier.citationIEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 29 August 1998, p. 74-77 [How to Cite?]
DOI: http://dx.doi.org/10.1109/HKEDM.1998.740191
 
dc.identifier.doihttp://dx.doi.org/10.1109/HKEDM.1998.740191
 
dc.identifier.hkuros45628
 
dc.identifier.urihttp://hdl.handle.net/10722/46144
 
dc.languageeng
 
dc.publisherIEEE.
 
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectElectronics
 
dc.titleAnodic-oxide-induced interdiffusion in quantum wells structure
 
dc.typeConference_Paper
 
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