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Conference Paper: Anodic-oxide-induced interdiffusion in quantum wells structure

TitleAnodic-oxide-induced interdiffusion in quantum wells structure
Authors
Chan, CYLi, EHShu, YTan, HHJagadish, C
KeywordsElectronics
Issue Date1998
PublisherIEEE.
Citation
IEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 29 August 1998, p. 74-77 How to Cite?
DOI: http://dx.doi.org/10.1109/HKEDM.1998.740191
AbstractEnhancement of interdiffusion in GaAs/AlGaAs quantum wells (QWs) due to anodic oxides was studied. Photoluminescence and diffused QW modeling were used to understand the effects of intermixing on the QW structure. The activation energy is similar to those obtained from SiO 2 cap annealed quantum well structures.
Persistent Identifierhttp://hdl.handle.net/10722/46144

 

DC FieldValueLanguage
dc.contributor.authorChan, CYen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorShu, Yen_HK
dc.contributor.authorTan, HHen_HK
dc.contributor.authorJagadish, Cen_HK
dc.date.accessioned2007-10-30T06:43:26Z-
dc.date.available2007-10-30T06:43:26Z-
dc.date.issued1998en_HK
dc.identifier.citationIEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 29 August 1998, p. 74-77en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46144-
dc.description.abstractEnhancement of interdiffusion in GaAs/AlGaAs quantum wells (QWs) due to anodic oxides was studied. Photoluminescence and diffused QW modeling were used to understand the effects of intermixing on the QW structure. The activation energy is similar to those obtained from SiO 2 cap annealed quantum well structures.en_HK
dc.format.extent328421 bytes-
dc.format.extent1960 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectElectronicsen_HK
dc.titleAnodic-oxide-induced interdiffusion in quantum wells structureen_HK
dc.typeConference_Paperen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/HKEDM.1998.740191en_HK
dc.identifier.scopuseid_2-s2.0-85051804038-
dc.identifier.hkuros45628-

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