File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Antimonide-based interdiffused quantum wells

TitleAntimonide-based interdiffused quantum wells
Authors
KeywordsAntimonide
Interdiffusion
Quantum well
Mid-Infrared absorption
Issue Date1998
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Optoelectronic Materials and Devices, Taipei, Taiwan, China, 9-11 July 1998, v. 3419, p. 299-307 How to Cite?
AbstractAntimonide (Sb) is said to be an emerging optoelectronic materials for both high speed and long wavelength electronics devices. Recently, there has been much research activities on antimonide based system. Among Group V elements, antimonide is of particular interest as its lattice parameter matches solid solutions of various ternary and quaternary III-V compounds whose band gap cover a wide spectral range from absorption in antimonide based superlattices, detection of longer wavelength of 8 to 14 micrometers is possible. With the technique of interdiffusion applying to an antimonide based quantum well, we will be able to obtain devices which are bias tunable. This technique of interdiffusion is a thermal process which induces an interdiffusion of the constituent atoms across the heterointerfaces of an as-grown quantum well, and results in modification of the composition and confinement profiles of the quantum well structures. Hence, the optical properties of the material can be modified to desire values. In this presentation, an antimonide based interdiffused quantum well structure is carefully examined including experimental results, with strong emphasis on its tunable properties and summarized with focus on its device applications and future development.
Persistent Identifierhttp://hdl.handle.net/10722/46139
ISSN

 

DC FieldValueLanguage
dc.contributor.authorSim, SKHen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorMutamba, Ken_HK
dc.contributor.authorHartnagel, HLen_HK
dc.date.accessioned2007-10-30T06:43:20Z-
dc.date.available2007-10-30T06:43:20Z-
dc.date.issued1998en_HK
dc.identifier.citationOptoelectronic Materials and Devices, Taipei, Taiwan, China, 9-11 July 1998, v. 3419, p. 299-307en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46139-
dc.description.abstractAntimonide (Sb) is said to be an emerging optoelectronic materials for both high speed and long wavelength electronics devices. Recently, there has been much research activities on antimonide based system. Among Group V elements, antimonide is of particular interest as its lattice parameter matches solid solutions of various ternary and quaternary III-V compounds whose band gap cover a wide spectral range from absorption in antimonide based superlattices, detection of longer wavelength of 8 to 14 micrometers is possible. With the technique of interdiffusion applying to an antimonide based quantum well, we will be able to obtain devices which are bias tunable. This technique of interdiffusion is a thermal process which induces an interdiffusion of the constituent atoms across the heterointerfaces of an as-grown quantum well, and results in modification of the composition and confinement profiles of the quantum well structures. Hence, the optical properties of the material can be modified to desire values. In this presentation, an antimonide based interdiffused quantum well structure is carefully examined including experimental results, with strong emphasis on its tunable properties and summarized with focus on its device applications and future development.en_HK
dc.format.extent524400 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCopyright 1998 Society of Photo-Optical Instrumentation Engineers. This paper was published in Optoelectronic Materials and Devices, Taipei, Taiwan, China, 9-11 July 1998, v. 3419, p. 299-307 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en_HK
dc.subjectAntimonideen_HK
dc.subjectInterdiffusionen_HK
dc.subjectQuantum wellen_HK
dc.subjectMid-Infrared absorptionen_HK
dc.titleAntimonide-based interdiffused quantum wellsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=3419&spage=299&epage=307&date=1998&atitle=Antimonide-based+interdiffused+quantum+wellsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.311021en_HK
dc.identifier.scopuseid_2-s2.0-0032401626-
dc.identifier.hkuros45599-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats