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Conference Paper: Impurity-free intermixing of InGaAs/GaAs-strained multiple quantum well infrared photodetectors

TitleImpurity-free intermixing of InGaAs/GaAs-strained multiple quantum well infrared photodetectors
Authors
KeywordsMultiple quantum well
Photodetector
Interdiffusion
Responsivity
Leakage current
Issue Date1998
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Photodetectors: Materials and Devices III, San Jose, California, USA, 28-30 January 1998, v. 3287, p. 105-112 How to Cite?
AbstractInterdiffusion effect has been investigated in highly strained InGaAs/GaAs multiple quantum well (MQW) IR photodetector. Impurity-free interdiffusion techniques was utilized via rapid thermal annealing (RTA) using electron- beam evaporated SiO2 cap layers at temperature 850 degrees C to study the optical and electrical properties of the interdiffused photodetector. Photoluminescence (PL) spectrum is blue shifted and PL linewidth remains almost the same, indicating no strain relaxation and deterioration of the heterostructure quality. Both transverse magnetic and transverse electric IR intersubband transitions are retained and observed after intermixing. The absorption peak wavelength is red shifted continuously from the as grown 10.20 to the interdiffused 10.5 and 11.17 micrometers , respectively, without appreciable degradation in absorption strength for 5 and 10 s annealing. Annealed responsivity spectra of both 0 degrees and 90 degrees polarization are of compatible amplitude and red shifted but with narrower spectra linewidth. Dark current of the annealed devices is found to be an order of magnitude large than the as-grown one at 77K.
Persistent Identifierhttp://hdl.handle.net/10722/46138
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLee, ASen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorKarunasiri, RPGen_HK
dc.date.accessioned2007-10-30T06:43:19Z-
dc.date.available2007-10-30T06:43:19Z-
dc.date.issued1998en_HK
dc.identifier.citationPhotodetectors: Materials and Devices III, San Jose, California, USA, 28-30 January 1998, v. 3287, p. 105-112en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46138-
dc.description.abstractInterdiffusion effect has been investigated in highly strained InGaAs/GaAs multiple quantum well (MQW) IR photodetector. Impurity-free interdiffusion techniques was utilized via rapid thermal annealing (RTA) using electron- beam evaporated SiO2 cap layers at temperature 850 degrees C to study the optical and electrical properties of the interdiffused photodetector. Photoluminescence (PL) spectrum is blue shifted and PL linewidth remains almost the same, indicating no strain relaxation and deterioration of the heterostructure quality. Both transverse magnetic and transverse electric IR intersubband transitions are retained and observed after intermixing. The absorption peak wavelength is red shifted continuously from the as grown 10.20 to the interdiffused 10.5 and 11.17 micrometers , respectively, without appreciable degradation in absorption strength for 5 and 10 s annealing. Annealed responsivity spectra of both 0 degrees and 90 degrees polarization are of compatible amplitude and red shifted but with narrower spectra linewidth. Dark current of the annealed devices is found to be an order of magnitude large than the as-grown one at 77K.en_HK
dc.format.extent329894 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCopyright 1998 Society of Photo-Optical Instrumentation Engineers. This paper was published in Photodetectors: Materials and Devices III, San Jose, California, USA, 28-30 January 1998, v. 3287, p. 105-112 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en_HK
dc.subjectMultiple quantum wellen_HK
dc.subjectPhotodetectoren_HK
dc.subjectInterdiffusionen_HK
dc.subjectResponsivityen_HK
dc.subjectLeakage currenten_HK
dc.titleImpurity-free intermixing of InGaAs/GaAs-strained multiple quantum well infrared photodetectorsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=3287&spage=105&epage=112&date=1998&atitle=Impurity-free+intermixing+of+InGaAs/GaAs-strained+multiple+quantum+well+infrared+photodetectorsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.304471en_HK
dc.identifier.scopuseid_2-s2.0-0032225156-
dc.identifier.hkuros45574-

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