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Conference Paper: Optical properties of tensile-strained barrier GaAsP/GaAs intermixed quantum well structure

TitleOptical properties of tensile-strained barrier GaAsP/GaAs intermixed quantum well structure
Authors
Keywords111-V semiconductor
Quantum well
GaAsP/GaAs
Tensile-strained barrier
Band-gap engineering
Issue Date1999
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Physics and Simulation of Optoelectronic Devices VII, San Jose, California, USA, 25-29 January 1999, v. 3625, p. 503-514 How to Cite?
AbstractThe tensile-strained barrier GaAsP/GaAs quantum well (QW) structures fabricated on GaAs substrate has a remarkable potential for novel properties of laser structures. In this structure, the GaAs QW layer is embedded with tensile-strained GaAsP barriers grown on GaAs substrates. Recent research has reported that the threshold current densities with tensilestrained barrier QW laser are comparable with GaAsP/A1GaAs tensile-strained well QWs. In the case of tensile-strained barrier GaAsP/GaAs QW, a small amount of light-hole (LH) and heavy-hole (RH) splitting is attainable within a large range of well width and P compositions. By a suitable choice of material and structure parameters, it is possible to cause the coincidence of energy levels of HH and LII resulting in polarization-independent operation devices. In order to shift the HR and LH energy levels, the concept of band-gap engineering is a useful tool to accept the particular devices operation. Basically, intermixing process is one of easy ways to achieve the modification of bandstructure. During the process the asgrown square-QW compositional profile is modified to a graded profile thereby altering the confinement profile and subband structure in the QW. In this paper, the optical properties of intermixed GaAs QW with tensile-strained GaAsP barriers are reported.
Persistent Identifierhttp://hdl.handle.net/10722/46131
ISSN

 

DC FieldValueLanguage
dc.contributor.authorSim, SKHen_HK
dc.contributor.authorChan, MCYen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:43:10Z-
dc.date.available2007-10-30T06:43:10Z-
dc.date.issued1999en_HK
dc.identifier.citationPhysics and Simulation of Optoelectronic Devices VII, San Jose, California, USA, 25-29 January 1999, v. 3625, p. 503-514en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46131-
dc.description.abstractThe tensile-strained barrier GaAsP/GaAs quantum well (QW) structures fabricated on GaAs substrate has a remarkable potential for novel properties of laser structures. In this structure, the GaAs QW layer is embedded with tensile-strained GaAsP barriers grown on GaAs substrates. Recent research has reported that the threshold current densities with tensilestrained barrier QW laser are comparable with GaAsP/A1GaAs tensile-strained well QWs. In the case of tensile-strained barrier GaAsP/GaAs QW, a small amount of light-hole (LH) and heavy-hole (RH) splitting is attainable within a large range of well width and P compositions. By a suitable choice of material and structure parameters, it is possible to cause the coincidence of energy levels of HH and LII resulting in polarization-independent operation devices. In order to shift the HR and LH energy levels, the concept of band-gap engineering is a useful tool to accept the particular devices operation. Basically, intermixing process is one of easy ways to achieve the modification of bandstructure. During the process the asgrown square-QW compositional profile is modified to a graded profile thereby altering the confinement profile and subband structure in the QW. In this paper, the optical properties of intermixed GaAs QW with tensile-strained GaAsP barriers are reported.en_HK
dc.format.extent395774 bytes-
dc.format.extent1960 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCopyright 1999 Society of Photo-Optical Instrumentation Engineers. This paper was published in Physics and Simulation of Optoelectronic Devices VII, San Jose, California, USA, 25-29 January 1999, v. 3625, p. 503-514 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en_HK
dc.subject111-V semiconductoren_HK
dc.subjectQuantum wellen_HK
dc.subjectGaAsP/GaAsen_HK
dc.subjectTensile-strained barrieren_HK
dc.subjectBand-gap engineeringen_HK
dc.titleOptical properties of tensile-strained barrier GaAsP/GaAs intermixed quantum well structureen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=3625&spage=503&epage=514&date=1999&atitle=Optical+properties+of+tensile-strained+barrier+GaAsP/GaAs+intermixed+quantum+well+structureen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.356909en_HK
dc.identifier.hkuros45469-

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