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Conference Paper: Modeling the optical constants of wide-bandgap materials

TitleModeling the optical constants of wide-bandgap materials
Authors
KeywordsOptical constants
Semiconductors
Issue Date1999
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Physics and Simulation of Optoelectronic Devices VII, San Jose, California, USA, 25-29 January 1999, v. 3625, p. 49-56 How to Cite?
AbstractCalculations of the optical constants of hexagonal GaN (in the range 1-10 eV), InN (in the range 2-20 eV), A1N (in the range 6-20 eV) and 6H-SiC (in the range 1-30 eV) for the component perpendicular to the c axis are presented. The employed model is modified Adachi's model of the optical properties of semiconductors. In the employed model, damping constant rdescribing broadening phenomenon is replaced with the frequency dependent expression 1(w). In such a manner, type of broadening represents adjustable parameter of the model, allowing broadening to vary over a range of functions with similar kernels but different wings. Excellent agreement with experimental data is obtained for all investigated materials. Obtained relative rms errors for the real and imaginary parts of the index of refraction are equal to 3.5% and 5.2% for 6HSiC in the 1-30 eV range, 1 .7% and 4.1% for GaN in the 1.5-10 eV range, 1.2% and 2.5% for InN in the 2-10 eV range and 1 .5% and 1.9% for A1N in the 6-20 eV range.
Persistent Identifierhttp://hdl.handle.net/10722/46130
ISSN

 

DC FieldValueLanguage
dc.contributor.authorDjurisic, ABen_HK
dc.contributor.authorTsang, KOen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:43:09Z-
dc.date.available2007-10-30T06:43:09Z-
dc.date.issued1999en_HK
dc.identifier.citationPhysics and Simulation of Optoelectronic Devices VII, San Jose, California, USA, 25-29 January 1999, v. 3625, p. 49-56en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46130-
dc.description.abstractCalculations of the optical constants of hexagonal GaN (in the range 1-10 eV), InN (in the range 2-20 eV), A1N (in the range 6-20 eV) and 6H-SiC (in the range 1-30 eV) for the component perpendicular to the c axis are presented. The employed model is modified Adachi's model of the optical properties of semiconductors. In the employed model, damping constant rdescribing broadening phenomenon is replaced with the frequency dependent expression 1(w). In such a manner, type of broadening represents adjustable parameter of the model, allowing broadening to vary over a range of functions with similar kernels but different wings. Excellent agreement with experimental data is obtained for all investigated materials. Obtained relative rms errors for the real and imaginary parts of the index of refraction are equal to 3.5% and 5.2% for 6HSiC in the 1-30 eV range, 1 .7% and 4.1% for GaN in the 1.5-10 eV range, 1.2% and 2.5% for InN in the 2-10 eV range and 1 .5% and 1.9% for A1N in the 6-20 eV range.en_HK
dc.format.extent338898 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsCopyright 1999 Society of Photo-Optical Instrumentation Engineers. This paper was published in Physics and Simulation of Optoelectronic Devices VII, San Jose, California, USA, 25-29 January 1999, v. 3625, p. 49-56 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en_HK
dc.subjectOptical constantsen_HK
dc.subjectSemiconductorsen_HK
dc.titleModeling the optical constants of wide-bandgap materialsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=3625&spage=49&epage=56&date=1999&atitle=Modeling+the+optical+constants+of+wide-bandgap+materialsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.356911en_HK
dc.identifier.hkuros45440-

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