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Conference Paper: Three-cation intermixed InGaAs/InAlAs quantum well structures and their optical gain properties

TitleThree-cation intermixed InGaAs/InAlAs quantum well structures and their optical gain properties
Authors
Chan, YChan, MCYLi, EH
Keywords111-V Semiconductor
Quantum Well
InGaAsfInAlAs
Interdiffusion
Optical gain
Issue Date1998
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Physics and simulation of optoelectronic devices VI, San Jose, California, USA, 26-30 January 1998. In Proceedings of SPIE, 1998, v. 3283, p. 357-364 How to Cite?
DOI: http://dx.doi.org/10.1117/12.316669
AbstractMultiple cations intermixed In053Ga047As/In052A104,As quantum well structure with 60 A well width is investigated by using the expanded form of Fick's second law. It was found that a maximum compressive strain of 0.64% is obtained when annealing time reaches 3 hours at 812 °C in the indium sublattice. For a small interdiffusion, i.e. 1 to 1.5 hrs, the subband separation between the lowest heavy and light hole states is at its greatest. This is a major contribution to the band structure and averaged density of states, thus enhancement in optical gain up to 40% is obtained. For a large interdiffusion, i.e. up to 6 hrs., a large blue shift of the peak gain from 0.842 to 1.016eV is observed.
Persistent Identifierhttp://hdl.handle.net/10722/46085
ISSN
0277-786X
2023 SCImago Journal Rankings: 0.152

 

DC FieldValueLanguage
dc.contributor.authorChan, Yen_HK
dc.contributor.authorChan, MCYen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:42:12Z-
dc.date.available2007-10-30T06:42:12Z-
dc.date.issued1998en_HK
dc.identifier.citationPhysics and simulation of optoelectronic devices VI, San Jose, California, USA, 26-30 January 1998. In Proceedings of SPIE, 1998, v. 3283, p. 357-364-
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46085-
dc.description.abstractMultiple cations intermixed In053Ga047As/In052A104,As quantum well structure with 60 A well width is investigated by using the expanded form of Fick's second law. It was found that a maximum compressive strain of 0.64% is obtained when annealing time reaches 3 hours at 812 °C in the indium sublattice. For a small interdiffusion, i.e. 1 to 1.5 hrs, the subband separation between the lowest heavy and light hole states is at its greatest. This is a major contribution to the band structure and averaged density of states, thus enhancement in optical gain up to 40% is obtained. For a large interdiffusion, i.e. up to 6 hrs., a large blue shift of the peak gain from 0.842 to 1.016eV is observed.en_HK
dc.format.extent294814 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.relation.ispartofProceedings of SPIE-
dc.rightsCopyright 1998 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.316669-
dc.subject111-V Semiconductoren_HK
dc.subjectQuantum Wellen_HK
dc.subjectInGaAsfInAlAsen_HK
dc.subjectInterdiffusionen_HK
dc.subjectOptical gainen_HK
dc.titleThree-cation intermixed InGaAs/InAlAs quantum well structures and their optical gain propertiesen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=3283&spage=357&epage=364&date=1998&atitle=Three-cation+intermixed+InGaAs/InAlAs+quantum+well+structures+and+their+optical+gain+propertiesen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.316669en_HK
dc.identifier.scopuseid_2-s2.0-57649135156-
dc.identifier.hkuros38010-
dc.identifier.issnl0277-786X-

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