File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Analysis of coupling effect on twin waveguides defined by ion-implanted AlGaAs/GaAs quantum wells

TitleAnalysis of coupling effect on twin waveguides defined by ion-implanted AlGaAs/GaAs quantum wells
Authors
Keywordswaveguide couplers
ion implantation
semiconductor waveguides
quantum well devices
diffusion process
Issue Date1998
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Integrated optic devices II, San Jose, California, USA, 28-30 January 1998, v. 3278, p. 207-218 How to Cite?
AbstractAn accurate model is presented for the analysis of ion-implanted AlGaAs/GaAs multi-quantum well symmetric and asymmetric twin waveguides. The modal propagation constants, modal indices and field profiles of the leading supermodes are solved numerically by using a quasi-vector method based on the Finite Difference method. Impurity induced disordering defined multi-quantum well twin waveguides are shown to have similar optical properties as conventional dielectric rib waveguides. They provide a more flexible control over the waveguiding and coupling characteristics by changing the diffusion time, the ion implant energy, the mask width, the waveguide separation, and the operating wavelength. By suitably varying these parameters, single-mode operation can be achieved, while the coupling length can be theoretically tuned from a few millimeters to a hundred meters, a difference in the order of lOs. Impurity induced disordering produced waveguide arrays are therefore highly recommended for integrated photonic IC realisation.
Persistent Identifierhttp://hdl.handle.net/10722/46084
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLi, ATHen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:42:11Z-
dc.date.available2007-10-30T06:42:11Z-
dc.date.issued1998en_HK
dc.identifier.citationIntegrated optic devices II, San Jose, California, USA, 28-30 January 1998, v. 3278, p. 207-218en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46084-
dc.description.abstractAn accurate model is presented for the analysis of ion-implanted AlGaAs/GaAs multi-quantum well symmetric and asymmetric twin waveguides. The modal propagation constants, modal indices and field profiles of the leading supermodes are solved numerically by using a quasi-vector method based on the Finite Difference method. Impurity induced disordering defined multi-quantum well twin waveguides are shown to have similar optical properties as conventional dielectric rib waveguides. They provide a more flexible control over the waveguiding and coupling characteristics by changing the diffusion time, the ion implant energy, the mask width, the waveguide separation, and the operating wavelength. By suitably varying these parameters, single-mode operation can be achieved, while the coupling length can be theoretically tuned from a few millimeters to a hundred meters, a difference in the order of lOs. Impurity induced disordering produced waveguide arrays are therefore highly recommended for integrated photonic IC realisation.en_HK
dc.format.extent442371 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsCopyright 1998 Society of Photo-Optical Instrumentation Engineers. This paper was published in Integrated optic devices II, San Jose, California, USA, 28-30 January 1998, v. 3278, p. 207-218 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en_HK
dc.subjectwaveguide couplersen_HK
dc.subjection implantationen_HK
dc.subjectsemiconductor waveguidesen_HK
dc.subjectquantum well devicesen_HK
dc.subjectdiffusion processen_HK
dc.titleAnalysis of coupling effect on twin waveguides defined by ion-implanted AlGaAs/GaAs quantum wellsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=3278&spage=207&epage=218&date=1998&atitle=Analysis+of+coupling+effect+on+twin+waveguides+defined+by+ion-implanted+AlGaAs/GaAs+quantum+wellsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.298201en_HK
dc.identifier.scopuseid_2-s2.0-0032225986-
dc.identifier.hkuros38009-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats