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Conference Paper: Electro -absorptive and electro -optic quantum well modulators using surface acoustic wave

TitleElectro -absorptive and electro -optic quantum well modulators using surface acoustic wave
Authors
KeywordsAcousto-optic devices
AlGaAs/GaAs quantum well
Modulators
Optical confinement of SAW devices
Piezoelectric effect of SAW
Surface acoustic wave
Issue Date1998
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 1998, v. 3278, p. 73-83 How to Cite?
AbstractThe characteristics of Al0.3Ga0.7As/GaAs QW acousto-absorption and acousto-optic modulators using the interaction between Surface Acoustic Wave (SAW) and quantum well (QW) optical waveguide structures are analyzed here theoretically. The QW structures are optimized by maximizing the optical confinement of modal field in the active region and the piezoelectric effect of SAW on QWs. The electric field induced by SAW reduces non-uniformly in depth, which limits in the development of high efficiency modulators, especially for devices with a large number of QWs in the active region. We present the results of the analysis of a range of QW SQW modulators using between one and 25 QWs in the active region. For devices with thin active regions, the QW structures are designed so that at the top surface strong SAW effects can be obtained while for the 25 periods structure, the QWs located at a depth of 2/3 SAW wavelength in order to obtain an uniform SAW induced electric field. The results show that the single and five QW devices are suitable for absorptive modulation and optical modulation respectively while the 25-QW modulators can shorten the modulation interaction length and thus increase modulation bandwidth. The effective index change of these devices are at least 10 times larger than the conventional surface acoustic wave devices. These results make the quantum-well modulators more attractive for the development of acousto-optic device applications.
Persistent Identifierhttp://hdl.handle.net/10722/46083
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorWeiss, BLen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:42:10Z-
dc.date.available2007-10-30T06:42:10Z-
dc.date.issued1998en_HK
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 1998, v. 3278, p. 73-83en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46083-
dc.description.abstractThe characteristics of Al0.3Ga0.7As/GaAs QW acousto-absorption and acousto-optic modulators using the interaction between Surface Acoustic Wave (SAW) and quantum well (QW) optical waveguide structures are analyzed here theoretically. The QW structures are optimized by maximizing the optical confinement of modal field in the active region and the piezoelectric effect of SAW on QWs. The electric field induced by SAW reduces non-uniformly in depth, which limits in the development of high efficiency modulators, especially for devices with a large number of QWs in the active region. We present the results of the analysis of a range of QW SQW modulators using between one and 25 QWs in the active region. For devices with thin active regions, the QW structures are designed so that at the top surface strong SAW effects can be obtained while for the 25 periods structure, the QWs located at a depth of 2/3 SAW wavelength in order to obtain an uniform SAW induced electric field. The results show that the single and five QW devices are suitable for absorptive modulation and optical modulation respectively while the 25-QW modulators can shorten the modulation interaction length and thus increase modulation bandwidth. The effective index change of these devices are at least 10 times larger than the conventional surface acoustic wave devices. These results make the quantum-well modulators more attractive for the development of acousto-optic device applications.en_HK
dc.format.extent443545 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCopyright 1998 Society of Photo-Optical Instrumentation Engineers. This paper was published in Integrated optic devices II, San Jose, California, USA, 28-30 January 1998, v. 3278, p. 73-83 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en_HK
dc.subjectAcousto-optic devicesen_HK
dc.subjectAlGaAs/GaAs quantum wellen_HK
dc.subjectModulatorsen_HK
dc.subjectOptical confinement of SAW devicesen_HK
dc.subjectPiezoelectric effect of SAWen_HK
dc.subjectSurface acoustic waveen_HK
dc.titleElectro -absorptive and electro -optic quantum well modulators using surface acoustic waveen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=3278&spage=73&epage=83&date=1998&atitle=Electro-absorptive+and+electro-optic+quantum+well+modulators+using+surface+acoustic+waveen_HK
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.298224en_HK
dc.identifier.scopuseid_2-s2.0-0032226093en_HK
dc.identifier.hkuros38007-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032226093&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume3278en_HK
dc.identifier.spage73en_HK
dc.identifier.epage83en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridWeiss, BL=7402309717en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK

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