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Conference Paper: Theory of critical layer thickness of noncontant quantum-well width produced by interdiffusion and its optoelectronics consequence

TitleTheory of critical layer thickness of noncontant quantum-well width produced by interdiffusion and its optoelectronics consequence
Authors
KeywordsPhysics engineering chemsitry
Issue Date1998
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Infrared applications of semiconductors II, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 1-4 December 1997, v. 484, p. 425-430 How to Cite?
AbstractIn this paper, the concept of critical layer thickness is applied to the interdiffused quantum well (DFQW) structure. For the as-grown InGaAs/InP lattice matched quantum well, the interdiffusion process will induce in-plane strain into the DFQW forming a lattice mismatched system. The relation between the as-grown well width (Lz) and the diffusion length (Ld) for formation of dislocation is presented.
Persistent Identifierhttp://hdl.handle.net/10722/46082
ISSN

 

DC FieldValueLanguage
dc.contributor.authorChan, MCYen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:42:09Z-
dc.date.available2007-10-30T06:42:09Z-
dc.date.issued1998en_HK
dc.identifier.citationInfrared applications of semiconductors II, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 1-4 December 1997, v. 484, p. 425-430en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46082-
dc.description.abstractIn this paper, the concept of critical layer thickness is applied to the interdiffused quantum well (DFQW) structure. For the as-grown InGaAs/InP lattice matched quantum well, the interdiffusion process will induce in-plane strain into the DFQW forming a lattice mismatched system. The relation between the as-grown well width (Lz) and the diffusion length (Ld) for formation of dislocation is presented.en_HK
dc.format.extent262508 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineering chemsitryen_HK
dc.titleTheory of critical layer thickness of noncontant quantum-well width produced by interdiffusion and its optoelectronics consequenceen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=484&spage=425&epage=430&date=1998&atitle=Theory+of+critical+layer+thickness+of+noncontant+quantum-well+width+produced+by+interdiffusion+and+its+optoelectronics+consequenceen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros38001-

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