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Conference Paper: Thermal interdiffusion in InGaAs/GaAs strained multiple quantum well infrared photodetector

TitleThermal interdiffusion in InGaAs/GaAs strained multiple quantum well infrared photodetector
Authors
KeywordsPhysics engineering chemistry
Issue Date1998
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Infrared applications of semiconductors II, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 1-4 December 1997, v. 484, p. 459-465 How to Cite?
AbstractRTA at 850 °C for 5 and 10 s is carried out to study the effect of interdiffusion on the optical and electrical properties of strained InGaAs/GaAs quantum well infrared photodetector. Photoluminescence measurement at 4.5 K shows that no strain relaxation or misfit dislocation formation occurs throughout the annealing process. Absorption and responsivity peak wavelengths are red shifted continuously without appreciable degradation in absorption strength. The normal incident absorption, which is believed to be the result of band-mixing effects induced by the coupling between the conduction and valence and is usually forbidden in conventional polarization selection rule, is preserved after interdiffusion. Responsivity spectra of both 0° and 90° polarization are of compatible amplitude and the shape of the annealed spectra becomes narrower. Dark current of the annealed devices is not very sensitive to temperature variation and is found to be an order of magnitude larger than the as-grown one at 77K.
Persistent Identifierhttp://hdl.handle.net/10722/46081
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLee, ASWen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorKarunasiri, Gen_HK
dc.date.accessioned2007-10-30T06:42:07Z-
dc.date.available2007-10-30T06:42:07Z-
dc.date.issued1998en_HK
dc.identifier.citationInfrared applications of semiconductors II, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 1-4 December 1997, v. 484, p. 459-465en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46081-
dc.description.abstractRTA at 850 °C for 5 and 10 s is carried out to study the effect of interdiffusion on the optical and electrical properties of strained InGaAs/GaAs quantum well infrared photodetector. Photoluminescence measurement at 4.5 K shows that no strain relaxation or misfit dislocation formation occurs throughout the annealing process. Absorption and responsivity peak wavelengths are red shifted continuously without appreciable degradation in absorption strength. The normal incident absorption, which is believed to be the result of band-mixing effects induced by the coupling between the conduction and valence and is usually forbidden in conventional polarization selection rule, is preserved after interdiffusion. Responsivity spectra of both 0° and 90° polarization are of compatible amplitude and the shape of the annealed spectra becomes narrower. Dark current of the annealed devices is not very sensitive to temperature variation and is found to be an order of magnitude larger than the as-grown one at 77K.en_HK
dc.format.extent291726 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineering chemistryen_HK
dc.titleThermal interdiffusion in InGaAs/GaAs strained multiple quantum well infrared photodetectoren_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=484&spage=459&epage=465&date=1998&atitle=Thermal+interdiffusion+in+InGaAs/GaAs+strained+multiple+quantum+well+infrared+photodetectoren_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros37999-

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