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Conference Paper: Diffused quantum well structures: advances in materials and device realizations

TitleDiffused quantum well structures: advances in materials and device realizations
Authors
KeywordsPhysics engineering chemistry
Issue Date1997
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Infrared applications of semiconductors: materials, processing and devices, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 2-5 December 1996, v. 450, p. 353-364 How to Cite?
Abstracthe Diffused Quantum Well (DFQW) structures created by both impurity induced and impurity free or vacancy promoted processes have recently been advanced to a higher level. The interdiffusion mechanism is no longer confined to two constituent atoms, but consists of two or multiple phase interdiffusion as well as multiple species, such as three cations interdiffusion and two pairs of cation-anion interdiffusion. Results show that the outcome of these interdiffusions is quite different. For instance, both compressive or tensile strain materials and both blue or red shifts in the bandgap can be achieved dependent on the type of interdiffusion. The advantage of being able to tune the material properties allows the realizations of higher performance lasers and modulators. Two lasing wavelengths (60 nm apart) are produced at λ (app. =) 1.55µm, on the same substrate, with threshold currents of 290mA, and an extremely large relative reflectance change (over 10000) is predicted with power consumption reduced by 67%. A six fold enhancement of the third order susceptibility over that of the bulk materials can be achieved by using the inter-subband transitions in the DFQW at λ (app. =) 10µm. Broadband (l000nm) detectors have also been realized due to the wide DFQW spectral bandwidth. Several state-of-the-art results of the DFQW will be summarized with an emphasis on the future developments and directions of the DFQW.
Persistent Identifierhttp://hdl.handle.net/10722/46078
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:42:04Z-
dc.date.available2007-10-30T06:42:04Z-
dc.date.issued1997en_HK
dc.identifier.citationInfrared applications of semiconductors: materials, processing and devices, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 2-5 December 1996, v. 450, p. 353-364en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46078-
dc.description.abstracthe Diffused Quantum Well (DFQW) structures created by both impurity induced and impurity free or vacancy promoted processes have recently been advanced to a higher level. The interdiffusion mechanism is no longer confined to two constituent atoms, but consists of two or multiple phase interdiffusion as well as multiple species, such as three cations interdiffusion and two pairs of cation-anion interdiffusion. Results show that the outcome of these interdiffusions is quite different. For instance, both compressive or tensile strain materials and both blue or red shifts in the bandgap can be achieved dependent on the type of interdiffusion. The advantage of being able to tune the material properties allows the realizations of higher performance lasers and modulators. Two lasing wavelengths (60 nm apart) are produced at λ (app. =) 1.55µm, on the same substrate, with threshold currents of 290mA, and an extremely large relative reflectance change (over 10000) is predicted with power consumption reduced by 67%. A six fold enhancement of the third order susceptibility over that of the bulk materials can be achieved by using the inter-subband transitions in the DFQW at λ (app. =) 10µm. Broadband (l000nm) detectors have also been realized due to the wide DFQW spectral bandwidth. Several state-of-the-art results of the DFQW will be summarized with an emphasis on the future developments and directions of the DFQW.en_HK
dc.format.extent688032 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineering chemistryen_HK
dc.titleDiffused quantum well structures: advances in materials and device realizationsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=450&spage=353&epage=364&date=1997&atitle=Diffused+quantum+well+structures:+advances+in+materials+and+device+realizationsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros37958-

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