File Download
  Links for fulltext
     (May Require Subscription)
  • Find via Find It@HKUL
Supplementary

Conference Paper: Single mode operation of impurity-induced disordering large area vertical cavity surface emitting lasers

TitleSingle mode operation of impurity-induced disordering large area vertical cavity surface emitting lasers
Authors
Lo, CWYu, SF
KeywordsPhysics engineering chemistry
Issue Date1997
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Infrared applications of semiconductors: materials, processing and devices, Materials Research Society Symposium Proceedings, Boston, Massachusetts, 2-5 December 1996, v. 450, p. 147-152 How to Cite?
AbstractVertical-cavity surface-emitting lasers (VCSELs) with suitable interdiffusion quantum wells profile by the use of selective impurity-induced disordering is proposed for high power single mode operation in large area devices. It is shown that the transverse optical confinement in the quantum well active region formed by the diffusion profile counteracts the influence of carrier spatial hole burning for VCSELs biased at high injection current. Results indicate that a single mode operation can be maintained in VCSELs with the diameter of core region equal to 50µm.
Persistent Identifierhttp://hdl.handle.net/10722/46029
ISSN
0272-9172
2019 SCImago Journal Rankings: 0.114

 

DC FieldValueLanguage
dc.contributor.authorLo, CWen_HK
dc.contributor.authorYu, SFen_HK
dc.date.accessioned2007-10-30T06:41:00Z-
dc.date.available2007-10-30T06:41:00Z-
dc.date.issued1997en_HK
dc.identifier.citationInfrared applications of semiconductors: materials, processing and devices, Materials Research Society Symposium Proceedings, Boston, Massachusetts, 2-5 December 1996, v. 450, p. 147-152en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46029-
dc.description.abstractVertical-cavity surface-emitting lasers (VCSELs) with suitable interdiffusion quantum wells profile by the use of selective impurity-induced disordering is proposed for high power single mode operation in large area devices. It is shown that the transverse optical confinement in the quantum well active region formed by the diffusion profile counteracts the influence of carrier spatial hole burning for VCSELs biased at high injection current. Results indicate that a single mode operation can be maintained in VCSELs with the diameter of core region equal to 50µm.en_HK
dc.format.extent269955 bytes-
dc.format.extent4647 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineering chemistryen_HK
dc.titleSingle mode operation of impurity-induced disordering large area vertical cavity surface emitting lasersen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=450&spage=147&epage=152&date=1997&atitle=Single+mode+operation+of+impurity-induced+disordering+large+area+vertical+cavity+surface+emitting+lasersen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros29449-
dc.identifier.issnl0272-9172-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats