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Conference Paper: Phase modulator defined by impurities induced disordering

TitlePhase modulator defined by impurities induced disordering
Authors
KeywordsPhysics engineerning chemistry
Issue Date1997
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium - Proceedings, 1997, v. 450, p. 383-388 How to Cite?
AbstractOptical waveguide type phase modulators defined by impurities induced disordering (IID) are investigated. To achieve a better optical confinement, a two steps ion implantation process is carried out to introduce additional impurities with respect to depth in the cladding region. A more uniform refractive index profile in deeper lateral confined region is obtained after thermal annealing. The refractive index different between the core and cladding can be adjusted by controlling the extension of interdiffusion in the cladding. This provide tuning of single mode operating region. For present IID phase modulator with 25 period of 100 angstroms/100 angstroms Al0.3Ga0.7As/GaAs multiple quantum wells single mode operating at 0.88 μm, a normalized phase shift of 362°/Vmm, chirping parameter of 47, and absorption loss less than 120 cm-1 are achieved theoretically.
Persistent Identifierhttp://hdl.handle.net/10722/46028
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLo, KMen_HK
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:40:59Z-
dc.date.available2007-10-30T06:40:59Z-
dc.date.issued1997en_HK
dc.identifier.citationMaterials Research Society Symposium - Proceedings, 1997, v. 450, p. 383-388en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46028-
dc.description.abstractOptical waveguide type phase modulators defined by impurities induced disordering (IID) are investigated. To achieve a better optical confinement, a two steps ion implantation process is carried out to introduce additional impurities with respect to depth in the cladding region. A more uniform refractive index profile in deeper lateral confined region is obtained after thermal annealing. The refractive index different between the core and cladding can be adjusted by controlling the extension of interdiffusion in the cladding. This provide tuning of single mode operating region. For present IID phase modulator with 25 period of 100 angstroms/100 angstroms Al0.3Ga0.7As/GaAs multiple quantum wells single mode operating at 0.88 μm, a normalized phase shift of 362°/Vmm, chirping parameter of 47, and absorption loss less than 120 cm-1 are achieved theoretically.en_HK
dc.format.extent273296 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineerning chemistryen_HK
dc.titlePhase modulator defined by impurities induced disorderingen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=450&spage=383&epage=388&date=1997&atitle=Phase+modulator+defined+by+impurities+induced+disorderingen_HK
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.scopuseid_2-s2.0-0030674151en_HK
dc.identifier.hkuros29446-
dc.identifier.volume450en_HK
dc.identifier.spage383en_HK
dc.identifier.epage388en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLo, KM=36347442500en_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK

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