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Conference Paper: The optical properties of InGaAs(P)/InP under group V sublattice two-phase interdiffusion

TitleThe optical properties of InGaAs(P)/InP under group V sublattice two-phase interdiffusion
Authors
KeywordsPhysics engineering chemistry
Issue Date1996
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Optoelectronic materials: ordering, composition modulation, and self-assembled structures, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 28-30 November 1995, v. 417, p. 289-294 How to Cite?
AbstractUsing the fundamental transition state, we will investigate the two phase interdiffusion of group V sublattice in a strained lattice matched InGaAs/InP quantum well (QW) structures. The model employs three parameters namely the diffusion coefficients in the barrier (Db)and in the well (Dw)and the concentration ratio (k) of the diffused species at the heterstructure. The QW model includes the effects of strain and the exciton. A pseudo time dependent calculation is also considered and results are fitted to the reported experimental data. These parameters which characterize the diffusion mechanism can be measure to form a better understanding of the interdiffsion process for group V sublattice.
Persistent Identifierhttp://hdl.handle.net/10722/46026
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLi, EHen_HK
dc.contributor.authorMicallef, Jen_HK
dc.contributor.authorShui, WCen_HK
dc.date.accessioned2007-10-30T06:40:56Z-
dc.date.available2007-10-30T06:40:56Z-
dc.date.issued1996en_HK
dc.identifier.citationOptoelectronic materials: ordering, composition modulation, and self-assembled structures, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 28-30 November 1995, v. 417, p. 289-294en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46026-
dc.description.abstractUsing the fundamental transition state, we will investigate the two phase interdiffusion of group V sublattice in a strained lattice matched InGaAs/InP quantum well (QW) structures. The model employs three parameters namely the diffusion coefficients in the barrier (Db)and in the well (Dw)and the concentration ratio (k) of the diffused species at the heterstructure. The QW model includes the effects of strain and the exciton. A pseudo time dependent calculation is also considered and results are fitted to the reported experimental data. These parameters which characterize the diffusion mechanism can be measure to form a better understanding of the interdiffsion process for group V sublattice.en_HK
dc.format.extent266764 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineering chemistryen_HK
dc.titleThe optical properties of InGaAs(P)/InP under group V sublattice two-phase interdiffusionen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=417&spage=289&epage=294&date=1996&atitle=The+optical+properties+of+InGaAs(P)/InP+under+group+V+sublattice+two-phase+interdiffusionen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros28214-

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