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Conference Paper: The effect of composition modification on the optical polarization independence in semiconductor strain quantum wells

TitleThe effect of composition modification on the optical polarization independence in semiconductor strain quantum wells
Authors
KeywordsPhysics engineerning chemistry
Issue Date1996
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Optoelectronic materials: ordering, composition modulation, and self-assembled structures: Materials Research Society Symposium Proceedings, Boston, MA., 28-30 November 1995, v. 417, p. 277-282 How to Cite?
AbstractPolarization independent quantum well (QW) materials operating under electro-absorption effect in optical switching and modulation devices are of intense interest recently. This is a theoretical analysis of the optical properties of strained InGaAs/InP QWs. The method of composition modification based on interdiffusion will be introduced to merge the heavy- and light- hole states in order to achieve polarization insensitivity. Results presented here show that the diffused QWs with and without as-growth tensile strain can both serve in polarization independent electro-absorption requirements. With a suitable design in the interdiffused QW materials, the optical polarization independence can operate from 1.465 to 1.540 µrn (tunability of 75*nm) with a maximum absorption change of 2000 cm-1 . In the case studied here, over 75% reduction in the required as-growth tensile strain is achieved as compared with the conventional rectangular QWs. This provides us with a simpler way to achieve high strain optical polarization independence through interdiffusion.
Persistent Identifierhttp://hdl.handle.net/10722/46025
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorFeng, Hen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorKam, SKen_HK
dc.date.accessioned2007-10-30T06:40:55Z-
dc.date.available2007-10-30T06:40:55Z-
dc.date.issued1996en_HK
dc.identifier.citationOptoelectronic materials: ordering, composition modulation, and self-assembled structures: Materials Research Society Symposium Proceedings, Boston, MA., 28-30 November 1995, v. 417, p. 277-282en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46025-
dc.description.abstractPolarization independent quantum well (QW) materials operating under electro-absorption effect in optical switching and modulation devices are of intense interest recently. This is a theoretical analysis of the optical properties of strained InGaAs/InP QWs. The method of composition modification based on interdiffusion will be introduced to merge the heavy- and light- hole states in order to achieve polarization insensitivity. Results presented here show that the diffused QWs with and without as-growth tensile strain can both serve in polarization independent electro-absorption requirements. With a suitable design in the interdiffused QW materials, the optical polarization independence can operate from 1.465 to 1.540 µrn (tunability of 75*nm) with a maximum absorption change of 2000 cm-1 . In the case studied here, over 75% reduction in the required as-growth tensile strain is achieved as compared with the conventional rectangular QWs. This provides us with a simpler way to achieve high strain optical polarization independence through interdiffusion.en_HK
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium Proceedings-
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineerning chemistryen_HK
dc.titleThe effect of composition modification on the optical polarization independence in semiconductor strain quantum wellsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=417&spage=277&epage=282&date=1996&atitle=The+effect+of+composition+modification+on+the+optical+polarization+independence+in+semiconductor+strain+quantum+wellsen_HK
dc.identifier.emailChoy, Wallace CH:chchoy@eee.hku.hk-
dc.identifier.authorityChoy, Wallace CH=rp00218-
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.scopuseid_2-s2.0-0029720033-
dc.identifier.hkuros28212-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0029720033&selection=ref&src=s&origin=recordpage-
dc.identifier.volume417-
dc.identifier.spage277-
dc.identifier.epage282-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridChoy, Wallace CH=7006202371-
dc.identifier.scopusauthoridFeng, Hao=8583849200-
dc.identifier.scopusauthoridKam, SK=35888284300-
dc.identifier.scopusauthoridLi, EHerbert=7201410087-
dc.customcontrol.immutablesml 151028 - merged-

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