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Conference Paper: Analysis of three types of interdiffusion process in InGaAs/InP quantum-well and their devices implications

TitleAnalysis of three types of interdiffusion process in InGaAs/InP quantum-well and their devices implications
Authors
KeywordsPhysics engineerning chemistry
Issue Date1997
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Infrared applications of semiconductors: materials, processing and devices, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 2-5 December 1996, v. 450, p. 389-394 How to Cite?
AbstractThe optical properties of Ino 53Gao 47AS/I11P single quantum well (QW) (with an as-grown well width of 60Å structures) interdiffused with different cation and anion interdiffusion rates have been theoretically analyzed for applications in optoelectronics. The interdiffusion of InGaAs/InP QW structures is complicated as interdiffusion can occur for either (i) only group-Ill (In,Ga), (ii) group-V (As,P), or (iii) both group-Ill and group-V sublattices. Depending on the resulting composition profiles, the shifts (blue or red) of the transition energies can be tuned to wavelengths between 1.3µm to 1.55µm for device applications. The results show that the control of the rates of cation and anion interdiffusion offers interesting possibilities for designing optoelectronic devices such as modulators and lasers.
Persistent Identifierhttp://hdl.handle.net/10722/46024
ISSN

 

DC FieldValueLanguage
dc.contributor.authorChan, MCYen_HK
dc.contributor.authorChan, KSen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:40:53Z-
dc.date.available2007-10-30T06:40:53Z-
dc.date.issued1997en_HK
dc.identifier.citationInfrared applications of semiconductors: materials, processing and devices, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 2-5 December 1996, v. 450, p. 389-394en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46024-
dc.description.abstractThe optical properties of Ino 53Gao 47AS/I11P single quantum well (QW) (with an as-grown well width of 60Å structures) interdiffused with different cation and anion interdiffusion rates have been theoretically analyzed for applications in optoelectronics. The interdiffusion of InGaAs/InP QW structures is complicated as interdiffusion can occur for either (i) only group-Ill (In,Ga), (ii) group-V (As,P), or (iii) both group-Ill and group-V sublattices. Depending on the resulting composition profiles, the shifts (blue or red) of the transition energies can be tuned to wavelengths between 1.3µm to 1.55µm for device applications. The results show that the control of the rates of cation and anion interdiffusion offers interesting possibilities for designing optoelectronic devices such as modulators and lasers.en_HK
dc.format.extent268770 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineerning chemistryen_HK
dc.titleAnalysis of three types of interdiffusion process in InGaAs/InP quantum-well and their devices implicationsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=450&spage=389&epage=394&date=1997&atitle=Analysis+of+three+types+of+interdiffusion+process+in+InGaAs/InP+quantum-well+and+their+devices+implicationsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros28206-

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