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Conference Paper: Optical properties of diffused AlGaAs/GaAs multiple quantum wells and their applications in high power laser

TitleOptical properties of diffused AlGaAs/GaAs multiple quantum wells and their applications in high power laser
Authors
KeywordsPhysics engineerning chemistry
Issue Date1997
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Infrared applications of semiconductors: materials, processing and devices, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 2-5 December 1996, v. 450, p. 395-400 How to Cite?
AbstractWe will present results for an Al0.24Ga0.76As/GaAs diffused multiple quantum well with five periods of 100/100Å thick welVbarrier layers grown in between Al0.24Ga0.76As guiding layers and cladded on top by a 1µm thick p-Al0.44Ga0.56As layer and on the bottom by an n-Al0.44Ga0.56As layer of equal thickness, on a n+-GaAs buffer layer and n+-GaAs substrate. Vacancy enhanced QW diffusion is employed where a 2000Å thick layer of Si02 is deposited on top of the diffused multiple quantum well structure. Photoluminescence measurement and photovoltage measurement at room temperature show that after rapid thermal annealing for 30 sec at 1000 °C to 1040 °C, a bandgap shift of 30 nm is obtained for the exciton edge. Further, this technique is applied to a ridge waveguide laser structure to make two windows for high power output up to 36 mW. This device shows that the diffusion process may have practical applications.
Persistent Identifierhttp://hdl.handle.net/10722/46023
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLuo, Yen_HK
dc.contributor.authorJing, AQen_HK
dc.contributor.authorHao, ZBen_HK
dc.contributor.authorWang, JHen_HK
dc.contributor.authorLai, TWKen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:40:52Z-
dc.date.available2007-10-30T06:40:52Z-
dc.date.issued1997en_HK
dc.identifier.citationInfrared applications of semiconductors: materials, processing and devices, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 2-5 December 1996, v. 450, p. 395-400en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46023-
dc.description.abstractWe will present results for an Al0.24Ga0.76As/GaAs diffused multiple quantum well with five periods of 100/100Å thick welVbarrier layers grown in between Al0.24Ga0.76As guiding layers and cladded on top by a 1µm thick p-Al0.44Ga0.56As layer and on the bottom by an n-Al0.44Ga0.56As layer of equal thickness, on a n+-GaAs buffer layer and n+-GaAs substrate. Vacancy enhanced QW diffusion is employed where a 2000Å thick layer of Si02 is deposited on top of the diffused multiple quantum well structure. Photoluminescence measurement and photovoltage measurement at room temperature show that after rapid thermal annealing for 30 sec at 1000 °C to 1040 °C, a bandgap shift of 30 nm is obtained for the exciton edge. Further, this technique is applied to a ridge waveguide laser structure to make two windows for high power output up to 36 mW. This device shows that the diffusion process may have practical applications.en_HK
dc.format.extent227777 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineerning chemistryen_HK
dc.titleOptical properties of diffused AlGaAs/GaAs multiple quantum wells and their applications in high power laseren_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=450&spage=395&epage=400&date=1997&atitle=Optical+properties+of+diffused+AlGaAs/GaAs+multiple+quantum+wells+and+their+applications+in+high+power+laseren_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros28202-

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