File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Interdiffusion effect on the gain of InGaAs/InP quantum well laser

TitleInterdiffusion effect on the gain of InGaAs/InP quantum well laser
Authors
KeywordsInterdiffusion
Bandstructure engineering
InGaAs/InP
Laser gain
Quantum well
Issue Date1996
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Semiconductor lasers II, Beijing, China, 6-7 November 1996, v. 2886, p. 140-150 How to Cite?
AbstractLattice-matched In0.53Ga0.47As/InP quantum well (QW) structures are of considerable interest in photonic application since they enabled device operation in the 1.3micrometers to 1.55micrometers wavelength range which is of importance for optical communication systems. The process of interdiffusion modifies the as-grown square QW to a graded QW which alter the subband structure and optical properties of the QW. Thus it provides a useful tool for bandstructure engineering. The interdiffusion process of InGaAs/InP QW provides more degrees of freedom than AlGaAs/GaAs QW system since interdiffusion can occur for group-III, group-V, and groups III plus V together. These are determined by the temperature and chemical environment used during annealing of the QW structure. The effect of interdiffusion on the laser performances of InGaAs/InP QWs is also studied based on these different types of diffusion processes. It is found that the operating wavelength shows both a red shift and a blue shift depending on the types of diffusion process. It is also found that group-III interdiffusion gives the best performance of InGaAs/InP QW laser when comparing to the other tow types of interdiffusion in terms of a smaller threshold carrier density.
Persistent Identifierhttp://hdl.handle.net/10722/46021
ISSN

 

DC FieldValueLanguage
dc.contributor.authorChan, MCYen_HK
dc.contributor.authorChan, KSen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:40:49Z-
dc.date.available2007-10-30T06:40:49Z-
dc.date.issued1996en_HK
dc.identifier.citationSemiconductor lasers II, Beijing, China, 6-7 November 1996, v. 2886, p. 140-150en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46021-
dc.description.abstractLattice-matched In0.53Ga0.47As/InP quantum well (QW) structures are of considerable interest in photonic application since they enabled device operation in the 1.3micrometers to 1.55micrometers wavelength range which is of importance for optical communication systems. The process of interdiffusion modifies the as-grown square QW to a graded QW which alter the subband structure and optical properties of the QW. Thus it provides a useful tool for bandstructure engineering. The interdiffusion process of InGaAs/InP QW provides more degrees of freedom than AlGaAs/GaAs QW system since interdiffusion can occur for group-III, group-V, and groups III plus V together. These are determined by the temperature and chemical environment used during annealing of the QW structure. The effect of interdiffusion on the laser performances of InGaAs/InP QWs is also studied based on these different types of diffusion processes. It is found that the operating wavelength shows both a red shift and a blue shift depending on the types of diffusion process. It is also found that group-III interdiffusion gives the best performance of InGaAs/InP QW laser when comparing to the other tow types of interdiffusion in terms of a smaller threshold carrier density.en_HK
dc.format.extent273452 bytes-
dc.format.extent1960 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCopyright 1996 Society of Photo-Optical Instrumentation Engineers. This paper was published in Semiconductor lasers II, Beijing, China, 6-7 November 1996, v. 2886, p. 140-150 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en_HK
dc.subjectInterdiffusionen_HK
dc.subjectBandstructure engineeringen_HK
dc.subjectInGaAs/InPen_HK
dc.subjectLaser gainen_HK
dc.subjectQuantum wellen_HK
dc.titleInterdiffusion effect on the gain of InGaAs/InP quantum well laseren_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=2886&spage=140&epage=150&date=1996&atitle=Interdiffusion+effect+on+the+gain+of+InGaAs/InP+quantum+well+laseren_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.251880en_HK
dc.identifier.hkuros28143-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats