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Conference Paper: Effect of carriers on the optical properties of AlGaAs/GaAs interdiffused quantum well lasers

TitleEffect of carriers on the optical properties of AlGaAs/GaAs interdiffused quantum well lasers
Authors
KeywordsAlGaAs/GaAs
Interdiffused quantum well
Lasers
Carrier effects
Refractive index
Issue Date1997
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Semiconductor lasers II, Beijing, China, 6-7 November 1996, v. 2886, p. 151-160 How to Cite?
AbstractThe carrier-induced effects in the change of refractive index on the GaAs/AlWGa1-W as square quantum well (SqQw) and diffused quantum well (DFQW) was investigated. Band-filling, bandgap shrinkage, and free- carrier absorption were included. Carrier concentrations from 1016 to 1018 cm-3 were considered. The energy levels and their associated wavefunctions in the SqQW or DFQW structures are calculated by solving both the Schroedinger and the Poisson equations self-consistently. It is followed by the absorption change, which is defined as the difference between the absorption coefficient with carrier injection in QW and that without carrier injection. The refractive index change can be obtained by applying Kramers-Kronig Transformation. These results obtained are useful in the design of devices, such as lasers, optical phase, modulators and switches. Thus, it is important to know the carrier-induced energy shift in GaAs/AlWGa$_1-W) as quantum well structures.
Persistent Identifierhttp://hdl.handle.net/10722/46019
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:40:47Z-
dc.date.available2007-10-30T06:40:47Z-
dc.date.issued1997en_HK
dc.identifier.citationSemiconductor lasers II, Beijing, China, 6-7 November 1996, v. 2886, p. 151-160en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46019-
dc.description.abstractThe carrier-induced effects in the change of refractive index on the GaAs/AlWGa1-W as square quantum well (SqQw) and diffused quantum well (DFQW) was investigated. Band-filling, bandgap shrinkage, and free- carrier absorption were included. Carrier concentrations from 1016 to 1018 cm-3 were considered. The energy levels and their associated wavefunctions in the SqQW or DFQW structures are calculated by solving both the Schroedinger and the Poisson equations self-consistently. It is followed by the absorption change, which is defined as the difference between the absorption coefficient with carrier injection in QW and that without carrier injection. The refractive index change can be obtained by applying Kramers-Kronig Transformation. These results obtained are useful in the design of devices, such as lasers, optical phase, modulators and switches. Thus, it is important to know the carrier-induced energy shift in GaAs/AlWGa$_1-W) as quantum well structures.en_HK
dc.format.extent210944 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCopyright 1997 Society of Photo-Optical Instrumentation Engineers. This paper was published in Semiconductor lasers II, Beijing, China, 6-7 November 1996, v. 2886, p. 151-160 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en_HK
dc.subjectAlGaAs/GaAsen_HK
dc.subjectInterdiffused quantum wellen_HK
dc.subjectLasersen_HK
dc.subjectCarrier effectsen_HK
dc.subjectRefractive indexen_HK
dc.titleEffect of carriers on the optical properties of AlGaAs/GaAs interdiffused quantum well lasersen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=2886&spage=151&epage=160&date=1997&atitle=Effect+of+carriers+on+the+optical+properties+of+AlGaAs/GaAs+interdiffused+quantum+well+lasersen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.251881en_HK
dc.identifier.hkuros28130-

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