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Conference Paper: Thermal stability study of oxygen implanted AlGaAs/GaAs single quantum well structures using photoreflectance

TitleThermal stability study of oxygen implanted AlGaAs/GaAs single quantum well structures using photoreflectance
Authors
KeywordsPhysics engineering chemistry
Issue Date1995
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Beam-solid Interactions for materials synthesis and characterization, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 28 November - 2 December 1994, v. 354, p. 331-336 How to Cite?
AbstractThe effects of interdiffusion on the band structure of two AlxGa1-xAs/GaAs single quantum well (SQW) structures were studied using room temperature photoreflectance. Rapid thermal annealing of the SQW structures at temperatures of 800°C, 900°C and 1000°C for times up to 180 seconds resulted in limited interdiffusion. Low dose (1014 cm-2) oxygen implantation reduced the thermal stability of these structures where the extent of the interdiffusion was found to be greater for the implanted samples for identical annealing conditions.
Persistent Identifierhttp://hdl.handle.net/10722/45958
ISSN

 

DC FieldValueLanguage
dc.contributor.authorHughes, PJen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorWeiss, BLen_HK
dc.contributor.authorJackson, HEen_HK
dc.contributor.authorRoberts, JSen_HK
dc.date.accessioned2007-10-30T06:39:27Z-
dc.date.available2007-10-30T06:39:27Z-
dc.date.issued1995en_HK
dc.identifier.citationBeam-solid Interactions for materials synthesis and characterization, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 28 November - 2 December 1994, v. 354, p. 331-336en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45958-
dc.description.abstractThe effects of interdiffusion on the band structure of two AlxGa1-xAs/GaAs single quantum well (SQW) structures were studied using room temperature photoreflectance. Rapid thermal annealing of the SQW structures at temperatures of 800°C, 900°C and 1000°C for times up to 180 seconds resulted in limited interdiffusion. Low dose (1014 cm-2) oxygen implantation reduced the thermal stability of these structures where the extent of the interdiffusion was found to be greater for the implanted samples for identical annealing conditions.en_HK
dc.format.extent248878 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineering chemistryen_HK
dc.titleThermal stability study of oxygen implanted AlGaAs/GaAs single quantum well structures using photoreflectanceen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=354&spage=331&epage=336&date=1995&atitle=Thermal+stability+study+of+oxygen+implanted+AlGaAs/GaAs+single+quantum+well+structures+using+photoreflectanceen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros1550-

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