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Conference Paper: Effects of oxidation temperature on Ga 2O3 film thermally grown on GaN

TitleEffects of oxidation temperature on Ga 2O3 film thermally grown on GaN
Authors
KeywordsComputers
Circuits
Issue Date2005
PublisherIEEE.
Citation
The 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC). In Conference Proceedings, 2005, p. 605-608 How to Cite?
AbstractThe effects of oxidation temperature on thermally oxidized GaN film were investigated. The GaN wafers were oxidzied at 750 °C, 800 °C and 850 °C respectively. The electrical characteristics and interface quality of MOS capacitors were compared among different oxidation temperatures. The sample oxidized at 800 °C presented best current-voltage, capacitance-voltage characteristics and smoothest surface morphology, while the higher oxidation temperature of 850 °C gave best interface quality. The electrical breakdown field was increased by one order of magnitude when the sample was oxidized at 800 °C as compared with 750 °C and 850 °C. Lastly, after the sample oxidized at 800 °C was annealed at 850 °C for 10 min, the quality of its oxide was significantly degraded. © 2005 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/45914
References

 

DC FieldValueLanguage
dc.contributor.authorLin, Len_HK
dc.contributor.authorLuo, Yen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLau, KMen_HK
dc.date.accessioned2007-10-30T06:38:23Z-
dc.date.available2007-10-30T06:38:23Z-
dc.date.issued2005en_HK
dc.identifier.citationThe 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC). In Conference Proceedings, 2005, p. 605-608en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45914-
dc.description.abstractThe effects of oxidation temperature on thermally oxidized GaN film were investigated. The GaN wafers were oxidzied at 750 °C, 800 °C and 850 °C respectively. The electrical characteristics and interface quality of MOS capacitors were compared among different oxidation temperatures. The sample oxidized at 800 °C presented best current-voltage, capacitance-voltage characteristics and smoothest surface morphology, while the higher oxidation temperature of 850 °C gave best interface quality. The electrical breakdown field was increased by one order of magnitude when the sample was oxidized at 800 °C as compared with 750 °C and 850 °C. Lastly, after the sample oxidized at 800 °C was annealed at 850 °C for 10 min, the quality of its oxide was significantly degraded. © 2005 IEEE.en_HK
dc.format.extent2364472 bytes-
dc.format.extent6324 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofProceedings of IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2005en_HK
dc.rights©2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectComputersen_HK
dc.subjectCircuitsen_HK
dc.titleEffects of oxidation temperature on Ga 2O3 film thermally grown on GaNen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/EDSSC.2005.1635346en_HK
dc.identifier.scopuseid_2-s2.0-43549113870en_HK
dc.identifier.hkuros120781-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-43549113870&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage605en_HK
dc.identifier.epage608en_HK
dc.identifier.scopusauthoridLin, L=8642604900en_HK
dc.identifier.scopusauthoridLuo, Y=54680940500en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLau, KM=7401559968en_HK
dc.customcontrol.immutablesml 160105 - merged-

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