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Conference Paper: Interface-state-induced degradation of GIDL current in n-MOSFETsunder hot-carrier stress

TitleInterface-state-induced degradation of GIDL current in n-MOSFETsunder hot-carrier stress
Authors
Lai, PTXu, JPZeng, XLiu, BY
KeywordsElectronics
Issue Date1996
PublisherIEEE.
Citation
The 1996 IEEE Hong Kong Electron Devices Meeting, Hong Kong, China, 29 June 1996. In Conference Proceedings, 1996, p. 102-105 How to Cite?
DOI: http://dx.doi.org/10.1109/HKEDM.1996.566329
AbstractThe dependence of increase in post-stress gate-induced-drain-leakage (GIDL) current in n-MOSFET's on creation of interface states (ΔDit) during hot-carrier stress with VG = 0.5 VD was investigated. An interface-trap-assisted tunneling conduction mechanism is proposed to account for the increase. The stress method of VG = 0.5 VD can generate a lot of interface traps near the valence band in thermal oxide samples, which is considerably suppressed in nitrided oxide samples. From the linear relationship between increase in post-stress GIDL current and created interface-state density during hot-carrier stress, ΔDit values can be estimated.
Persistent Identifierhttp://hdl.handle.net/10722/45877
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorZeng, Xen_HK
dc.contributor.authorLiu, BYen_HK
dc.date.accessioned2007-10-30T06:37:32Z-
dc.date.available2007-10-30T06:37:32Z-
dc.date.issued1996en_HK
dc.identifier.citationThe 1996 IEEE Hong Kong Electron Devices Meeting, Hong Kong, China, 29 June 1996. In Conference Proceedings, 1996, p. 102-105en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45877-
dc.description.abstractThe dependence of increase in post-stress gate-induced-drain-leakage (GIDL) current in n-MOSFET's on creation of interface states (ΔDit) during hot-carrier stress with VG = 0.5 VD was investigated. An interface-trap-assisted tunneling conduction mechanism is proposed to account for the increase. The stress method of VG = 0.5 VD can generate a lot of interface traps near the valence band in thermal oxide samples, which is considerably suppressed in nitrided oxide samples. From the linear relationship between increase in post-stress GIDL current and created interface-state density during hot-carrier stress, ΔDit values can be estimated.en_HK
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofProceedings of the IEEE Hong Kong Electron Devices Meeting-
dc.rights©1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectElectronicsen_HK
dc.titleInterface-state-induced degradation of GIDL current in n-MOSFETsunder hot-carrier stressen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.emailXu, JP: jpxu@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.authorityXu, JP=rp00197-
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/HKEDM.1996.566329en_HK
dc.identifier.scopuseid_2-s2.0-0030396941-
dc.identifier.hkuros12536-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0030396941&selection=ref&src=s&origin=recordpage-
dc.identifier.spage102-
dc.identifier.epage105-
dc.identifier.scopusauthoridLai, PT=7202946460-
dc.identifier.scopusauthoridXu, JP=7407004696-
dc.identifier.scopusauthoridZeng, X=7403248314-
dc.identifier.scopusauthoridLiu, BY=7408691219-
dc.customcontrol.immutablesml 160105 - merged-

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