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Conference Paper: Off-state gate leakage current in N-channel MOSFETs with gate dielectrics prepared by different techniques

TitleOff-state gate leakage current in N-channel MOSFETs with gate dielectrics prepared by different techniques
Authors
KeywordsElectronics
Issue Date1995
PublisherIEEE.
Citation
The 1995 IEEE Hong Kong Electron Devices Meeting, Hong Kong, China, 1 July 1995. In Conference Proceedings, 1995, p. 19-22 How to Cite?
AbstractThe off-state gate current of n-channel MOSFETs with OX, RONO, N20N, and N20G oxides as gate dielectrics was investigated in this work. It is revealed that gate current conduction mechanism in the low field region is very different for these oxides. Enhanced conductivity is observed in RONO and N20G oxides, which is attributed to the trap-assisted tunneling mechanism. Therefore, in view of gate leakage, the method of nitridizing pre-grown thermal oxide is more feasible than directly growing oxide in N2O ambient, especially in leakage sensitive applications, such as very-low-power battery-based circuits, DRAM cells, etc.
Persistent Identifierhttp://hdl.handle.net/10722/45874
References

 

DC FieldValueLanguage
dc.contributor.authorZeng, Xen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorNg, WTen_HK
dc.date.accessioned2007-10-30T06:37:29Z-
dc.date.available2007-10-30T06:37:29Z-
dc.date.issued1995en_HK
dc.identifier.citationThe 1995 IEEE Hong Kong Electron Devices Meeting, Hong Kong, China, 1 July 1995. In Conference Proceedings, 1995, p. 19-22en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45874-
dc.description.abstractThe off-state gate current of n-channel MOSFETs with OX, RONO, N20N, and N20G oxides as gate dielectrics was investigated in this work. It is revealed that gate current conduction mechanism in the low field region is very different for these oxides. Enhanced conductivity is observed in RONO and N20G oxides, which is attributed to the trap-assisted tunneling mechanism. Therefore, in view of gate leakage, the method of nitridizing pre-grown thermal oxide is more feasible than directly growing oxide in N2O ambient, especially in leakage sensitive applications, such as very-low-power battery-based circuits, DRAM cells, etc.en_HK
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectElectronicsen_HK
dc.titleOff-state gate leakage current in N-channel MOSFETs with gate dielectrics prepared by different techniquesen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/HKEDM.1995.520637en_HK
dc.identifier.scopuseid_2-s2.0-0029543968-
dc.identifier.hkuros12530-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0029543968&selection=ref&src=s&origin=recordpage-
dc.identifier.spage19-
dc.identifier.epage22-
dc.identifier.scopusauthoridXu, Zeng=7405429249-
dc.identifier.scopusauthoridLai, PT=7202946460-
dc.identifier.scopusauthoridNg, WT=7401613512-
dc.customcontrol.immutablesml 160105 - merged-

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