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Conference Paper: Electro-absorption and refraction at 1.5 μm in InGaAs/AlGaAssuperlattice growth on GaAs substrate

TitleElectro-absorption and refraction at 1.5 μm in InGaAs/AlGaAssuperlattice growth on GaAs substrate
Authors
KeywordsComputers
Issue Date1995
PublisherIEEE.
Citation
IEEE Region 10 International Conference on Microelectronics and VLSI, 6-10 November 1995, p. 77-80 How to Cite?
AbstractHigh indium concentration In0.65Ga0.35As/Al 0.33Ga0.67As superlattices on GaAs substrates are useful for modulators and optical communication applications. This is due to the lowest loss 1.55 μm optimum wavelength for operation of fiber optic systems. The optical parameters such as absorption coefficient and change in refractive index with applied electric field are investigated.
Persistent Identifierhttp://hdl.handle.net/10722/45840
ISSN

 

DC FieldValueLanguage
dc.contributor.authorChan, MCYen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorChan, KSen_HK
dc.date.accessioned2007-10-30T06:36:40Z-
dc.date.available2007-10-30T06:36:40Z-
dc.date.issued1995en_HK
dc.identifier.citationIEEE Region 10 International Conference on Microelectronics and VLSI, 6-10 November 1995, p. 77-80en_HK
dc.identifier.issn0886-1420en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45840-
dc.description.abstractHigh indium concentration In0.65Ga0.35As/Al 0.33Ga0.67As superlattices on GaAs substrates are useful for modulators and optical communication applications. This is due to the lowest loss 1.55 μm optimum wavelength for operation of fiber optic systems. The optical parameters such as absorption coefficient and change in refractive index with applied electric field are investigated.en_HK
dc.format.extent326244 bytes-
dc.format.extent1960 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectComputersen_HK
dc.titleElectro-absorption and refraction at 1.5 μm in InGaAs/AlGaAssuperlattice growth on GaAs substrateen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0886-1420&volume=&spage=77&epage=80&date=1995&atitle=Electro-absorption+and+refraction+at+1.5+μm+in+InGaAs/AlGaAssuperlattice+growth+on+GaAs+substrateen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/TENCON.1995.496340en_HK

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