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Article: Spontaneous emission mechanisms of GaInAsNGaAs quantum dot systems

TitleSpontaneous emission mechanisms of GaInAsNGaAs quantum dot systems
Authors
KeywordsPhysics Engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2006, v. 100 n. 12 How to Cite?
AbstractVariable-temperature photoluminescence (PL) spectra taken on two different kinds of GaInAsN quantum dots (QDs), having different In and N compositions and thicknesses, have been investigated both experimentally and theoretically. It is found that the temperature dependence of the spontaneous emissions from both samples behaves differently. Adopting a localized-state luminescence model, the quantitative reproduction of the measured variable-temperature PL spectra reveals a dissimilarity in luminescence mechanisms of the two samples. These results enrich the present understanding of the luminescence mechanisms in the GaInAsN QD systems and are important for design and improvement of GaInAsN QDs based light-emitting devices. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45283
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWei, ZFen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLi, Qen_HK
dc.date.accessioned2007-10-30T06:21:41Z-
dc.date.available2007-10-30T06:21:41Z-
dc.date.issued2006en_HK
dc.identifier.citationJournal Of Applied Physics, 2006, v. 100 n. 12en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45283-
dc.description.abstractVariable-temperature photoluminescence (PL) spectra taken on two different kinds of GaInAsN quantum dots (QDs), having different In and N compositions and thicknesses, have been investigated both experimentally and theoretically. It is found that the temperature dependence of the spontaneous emissions from both samples behaves differently. Adopting a localized-state luminescence model, the quantitative reproduction of the measured variable-temperature PL spectra reveals a dissimilarity in luminescence mechanisms of the two samples. These results enrich the present understanding of the luminescence mechanisms in the GaInAsN QD systems and are important for design and improvement of GaInAsN QDs based light-emitting devices. © 2006 American Institute of Physics.en_HK
dc.format.extent617388 bytes-
dc.format.extent6153 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Engineeringen_HK
dc.titleSpontaneous emission mechanisms of GaInAsNGaAs quantum dot systemsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=100&issue=12&spage=124311:1&epage=6&date=2006&atitle=Spontaneous+emission+mechanisms+of+GaInAsN/GaAs+quantum+dot+systemsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2401051en_HK
dc.identifier.scopuseid_2-s2.0-33846051819en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33846051819&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume100en_HK
dc.identifier.issue12en_HK
dc.identifier.isiWOS:000243157900088-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWei, ZF=7402259042en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK

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