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Article: Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

TitleInfluence of Si nanocrystal distributed in the gate oxide on the MOS capacitance
Authors
KeywordsDielectric constant
MOS capacitance
Silicon nanocrystal
Issue Date2006
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 2006, v. 53 n. 4, p. 730-736 How to Cite?
AbstractIn this paper, the authors have studied the influence of silicon nanocrystal (nc-Si) distributed in the gate oxide on the capacitance for the circumstances that the nc-Si does not form conductive percolation tunneling paths connecting the gate to the substrate. The nc-Si is synthesized by Si-ion implantation. The effective dielectric constant of the gate oxide in the nc-Si distributed region is calculated based on a sublayer model of the nc-Si distribution and the Maxwell-Garnett effective medium approximation. After the depth distribution of the effective dielectric constant is obtained, the MOS capacitance is determined. Two different nc-Si distributions, i.e., partial and full nc-Si distributions in the gate oxide, have been considered. The MOS capacitance obtained from the modeling has been compared to the capacitance measurement for a number of samples with various gate-oxide thicknesses, implantation energies and dosages, and an excellent agreement has been achieved for all the samples. A detailed picture of the influence of implantation energy and implantation dosage on the MOS capacitance has been obtained. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/45282
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorNg, CYen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorZhao, Pen_HK
dc.contributor.authorYang, XHen_HK
dc.contributor.authorLiu, KYen_HK
dc.contributor.authorTse, MSen_HK
dc.contributor.authorTrigg, ADen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-10-30T06:21:40Z-
dc.date.available2007-10-30T06:21:40Z-
dc.date.issued2006en_HK
dc.identifier.citationIeee Transactions On Electron Devices, 2006, v. 53 n. 4, p. 730-736en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45282-
dc.description.abstractIn this paper, the authors have studied the influence of silicon nanocrystal (nc-Si) distributed in the gate oxide on the capacitance for the circumstances that the nc-Si does not form conductive percolation tunneling paths connecting the gate to the substrate. The nc-Si is synthesized by Si-ion implantation. The effective dielectric constant of the gate oxide in the nc-Si distributed region is calculated based on a sublayer model of the nc-Si distribution and the Maxwell-Garnett effective medium approximation. After the depth distribution of the effective dielectric constant is obtained, the MOS capacitance is determined. Two different nc-Si distributions, i.e., partial and full nc-Si distributions in the gate oxide, have been considered. The MOS capacitance obtained from the modeling has been compared to the capacitance measurement for a number of samples with various gate-oxide thicknesses, implantation energies and dosages, and an excellent agreement has been achieved for all the samples. A detailed picture of the influence of implantation energy and implantation dosage on the MOS capacitance has been obtained. © 2006 IEEE.en_HK
dc.format.extent320595 bytes-
dc.format.extent13983 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectDielectric constanten_HK
dc.subjectMOS capacitanceen_HK
dc.subjectSilicon nanocrystalen_HK
dc.titleInfluence of Si nanocrystal distributed in the gate oxide on the MOS capacitanceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=53&issue=4&spage=730&epage=736&date=2006&atitle=Influence+of+Si+nanocrystal+distributed+in+the+gate+oxide+on+the+MOS+capacitanceen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/TED.2006.870872en_HK
dc.identifier.scopuseid_2-s2.0-33645731650en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33645731650&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume53en_HK
dc.identifier.issue4en_HK
dc.identifier.spage730en_HK
dc.identifier.epage736en_HK
dc.identifier.isiWOS:000236473500021-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridZhao, P=8521897200en_HK
dc.identifier.scopusauthoridYang, XH=7406503079en_HK
dc.identifier.scopusauthoridLiu, KY=7404199968en_HK
dc.identifier.scopusauthoridTse, MS=7103352646en_HK
dc.identifier.scopusauthoridTrigg, AD=8835395900en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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