Article: Si ion-induced instability in flatband Voltage of Si/sup +/-implanted gate oxides

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TitleSi ion-induced instability in flatband Voltage of Si/sup +/-implanted gate oxides
AuthorsNg, CY2
Chen, TP2
Ding, L2
Chen, Q2
Liu, Y2
Zhao, P2
Tseng, AA3
Fung, SHY1
KeywordsAnnealing
flatband voltage
low energy ion beam
silicon nanocrystal (nc-Si)
Issue Date2006
PublisherIEEE.
CitationIEEE Transactions on Electron Devices, 2006, v. 53 n. 5, p. 1280-1282 [How to Cite?]
DOI: http://dx.doi.org/10.1109/TED.2006.871841
AbstractEffect of the trapped Si ions in a 30-nm gate oxide implanted with Si/sup +/ at a very low energy (1.3 keV) on the flatband voltage after various thermal annealing has been examined. For the annealing at 700/spl deg/C for 20 min, although only 0.1% of the implanted Si ions remained, it can cause a flatband voltage shift of -21.3 V, and the flatband voltage shift reduces with time under a negative gate voltage showing neutralization of the trapped ions by the injected electrons from the gate. However, the annealing at 900/spl deg/C for 20 min has reduced the number of the remaining ions to the lowest limit corresponding to a flatband voltage shift of -0.1 V, and the application of the negative voltage does not change the flatband voltage. A higher annealing temperature or a longer annealing time does not show further improvement, suggesting that the annealing at 900/spl deg/C for 20 min is sufficient for eliminating the effect of the trapped ions.
ISSN0018-9383
2011 Impact Factor: 2.318
2011 SCImago Journal Rankings: 0.304
DOIhttp://dx.doi.org/10.1109/TED.2006.871841
ISI Accession Number IDWOS:000237369800043
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorNg, CY
dc.contributor.authorChen, TP
dc.contributor.authorDing, L
dc.contributor.authorChen, Q
dc.contributor.authorLiu, Y
dc.contributor.authorZhao, P
dc.contributor.authorTseng, AA
dc.contributor.authorFung, SHY
dc.date.accessioned2007-10-30T06:21:39Z
dc.date.available2007-10-30T06:21:39Z
dc.date.issued2006
dc.description.abstractEffect of the trapped Si ions in a 30-nm gate oxide implanted with Si/sup +/ at a very low energy (1.3 keV) on the flatband voltage after various thermal annealing has been examined. For the annealing at 700/spl deg/C for 20 min, although only 0.1% of the implanted Si ions remained, it can cause a flatband voltage shift of -21.3 V, and the flatband voltage shift reduces with time under a negative gate voltage showing neutralization of the trapped ions by the injected electrons from the gate. However, the annealing at 900/spl deg/C for 20 min has reduced the number of the remaining ions to the lowest limit corresponding to a flatband voltage shift of -0.1 V, and the application of the negative voltage does not change the flatband voltage. A higher annealing temperature or a longer annealing time does not show further improvement, suggesting that the annealing at 900/spl deg/C for 20 min is sufficient for eliminating the effect of the trapped ions.
dc.description.naturepublished_or_final_version
dc.format.extent121365 bytes
dc.format.extent13983 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.identifier.citationIEEE Transactions on Electron Devices, 2006, v. 53 n. 5, p. 1280-1282 [How to Cite?]
DOI: http://dx.doi.org/10.1109/TED.2006.871841
dc.identifier.doihttp://dx.doi.org/10.1109/TED.2006.871841
dc.identifier.hkuros115545
dc.identifier.isiWOS:000237369800043
dc.identifier.issn0018-9383
2011 Impact Factor: 2.318
2011 SCImago Journal Rankings: 0.304
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-33646021031
dc.identifier.urihttp://hdl.handle.net/10722/45281
dc.languageeng
dc.publisherIEEE.
dc.relation.referencesReferences in Scopus
dc.rights©2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.subjectAnnealing
dc.subjectflatband voltage
dc.subjectlow energy ion beam
dc.subjectsilicon nanocrystal (nc-Si)
dc.titleSi ion-induced instability in flatband Voltage of Si/sup +/-implanted gate oxides
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. Nanyang Technological University
  3. Arizona State University