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Article: Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures

TitleInfluence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures
Authors
KeywordsCharging behavior
Nanocrystal
Si-nanocrystal (nc-Si) distribution
Issue Date2006
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 2006, v. 53 n. 4, p. 914-917 How to Cite?
AbstractIn this brief, the electrical characteristics of MOS structures with specially designed distributions of Si nanocrystals (nc-Si) embedded in the oxides were investigated, and very different behaviors in the electrical characteristics are observed as a result of the difference in the nc-Si distribution. For the case of nc-Si being confined in a layer in the oxide close to the gate, charging and discharging the nc-Si lead to a shift in the flat-band voltage, and a small difference in the location of the peak concentration of nc-Si can yield a large difference in the memory programming characteristics. However, for the case of nc-Si distributed throughout the oxide with a high concentration, charging and discharging the nc-Si cause a modulation in the capacitance magnitude instead of the flat-band voltage shift. The difference between the two cases highlights the importance of the nc-Si distribution in the memory device applications of the nc-Si. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/45280
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorNg, CYen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorTse, MSen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorTseng, AAen_HK
dc.date.accessioned2007-10-30T06:21:38Z-
dc.date.available2007-10-30T06:21:38Z-
dc.date.issued2006en_HK
dc.identifier.citationIeee Transactions On Electron Devices, 2006, v. 53 n. 4, p. 914-917en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45280-
dc.description.abstractIn this brief, the electrical characteristics of MOS structures with specially designed distributions of Si nanocrystals (nc-Si) embedded in the oxides were investigated, and very different behaviors in the electrical characteristics are observed as a result of the difference in the nc-Si distribution. For the case of nc-Si being confined in a layer in the oxide close to the gate, charging and discharging the nc-Si lead to a shift in the flat-band voltage, and a small difference in the location of the peak concentration of nc-Si can yield a large difference in the memory programming characteristics. However, for the case of nc-Si distributed throughout the oxide with a high concentration, charging and discharging the nc-Si cause a modulation in the capacitance magnitude instead of the flat-band voltage shift. The difference between the two cases highlights the importance of the nc-Si distribution in the memory device applications of the nc-Si. © 2006 IEEE.en_HK
dc.format.extent123077 bytes-
dc.format.extent13983 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectCharging behavioren_HK
dc.subjectNanocrystalen_HK
dc.subjectSi-nanocrystal (nc-Si) distributionen_HK
dc.titleInfluence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structuresen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=53&issue=4&spage=914&epage=917&date=2006&atitle=Influence+of+Si-nanocrystal+distribution+in+the+oxide+on+the+charging+behavior+of+MOS+structuresen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/TED.2006.870528en_HK
dc.identifier.scopuseid_2-s2.0-33645750547en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33645750547&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume53en_HK
dc.identifier.issue4en_HK
dc.identifier.spage914en_HK
dc.identifier.epage917en_HK
dc.identifier.isiWOS:000236473500046-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridTse, MS=7103352646en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridTseng, AA=7102916705en_HK

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